AUIRF7736M2TR International Rectifier, AUIRF7736M2TR Datasheet - Page 4

• Manufacturer Part Number: AUIRF7736M2TR
• Description: MOSFET N-CH 40V 179A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF7736M2TR

• Input Capacitance (ciss) @ Vds: 4267pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 mOhm @ 65A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 179A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 108nC @ 10V
• Power - Max: 2.5W
• Mounting Type: *
• Package / Case: *
• Configuration: Single Quad Drain Quad Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 2.5 W
• Gate Charge Qg: 72 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 3. Typical On-Resistance vs. Gate Voltage
4
Fig 5. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
1000
1000
100
100
0.1
10
10
1
7
6
5
4
3
2
1
1
0.1
4
2
6
V GS, Gate -to -Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
3
V GS , Gate-to-Source Voltage (V)
8
4
1
≤ 60µs
Tj = 25°C
10
5.0V
5
V DS = 25V
≤60µs PULSE WIDTH
12
PULSE WIDTH
6
14
T J = 125°C
10
T J = 25°C
TOP
BOTTOM
7
16
T J = -40°C
TJ = 25°C
TJ = 175°C
I D = 65A
8
18
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
100
20
9
Fig 6. Normalized On-Resistance vs. Temperature
1000
100
4.0
3.5
3.0
2.5
2.0
1.5
Fig 4. Typical On-Resistance vs. Drain Current
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
0
TOP
BOTTOM
I D = 65A
V GS = 10V
Fig 2. Typical Output Characteristics
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
50
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
I D , Drain Current (A)
1
≤ 60µs
Tj = 175°C
5.0V
T J = 125°C
T J = 25°C
100
PULSE WIDTH
10
150
Vgs = 10V
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200
100