AUIRF3205ZS International Rectifier, AUIRF3205ZS Datasheet - Page 6

• Manufacturer Part Number: AUIRF3205ZS
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF3205ZS

• Input Capacitance (ciss) @ Vds: 3450pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Power - Max: 170W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 170 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 76 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

120
100
6
80
60
40
20
Fig 9. Maximum Drain Current Vs.
0
25
0.001
0.01
0.1
1
1E-006
50
Case Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
T C , Case Temperature (°C)
D = 0.50
75
0.02
0.01
0.20
0.10
0.05
LIMITED BY PACKAGE
SINGLE PULSE
( THERMAL RESPONSE )
100
1E-005
125
150
175
t 1 , Rectangular Pulse Duration (sec)
0.0001
2.5
2.0
1.5
1.0
0.5
0.001
-60 -40 -20 0
I D = 66A
V GS = 10V
Fig 10. Normalized On-Resistance
T J , Junction Temperature (°C)
Vs. Temperature
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
20 40 60 80 100 120 140 160 180
0.01
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0.1