AUIRL3705ZSTRR International Rectifier, AUIRL3705ZSTRR Datasheet - Page 2
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AUIRL3705ZSTRR
Manufacturer Part Number
AUIRL3705ZSTRR
Description
MOSFET N-CH 55V 75A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRL3705ZSTRL.pdf
(15 pages)
Specifications of AUIRL3705ZSTRR
Input Capacitance (ciss) @ Vds
2880pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 52A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 5V
Power - Max
130W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Repetitive rating; pulse width limited by
Limited by T
Pulse width
C
Notes:
Static Electrical Characteristics @ T
V
R
V
gfs
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
V
(BR)DSS
GS(th)
SD
DS(on)
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
2
C
R
(BR)DSS
max. junction temperature. (See fig. 11).
above this value.
oss
Limited by T
This value determined from sample failure population. 100%
oss
tested to this value in production.
G
eff.
avalanche performance.
= 25 , I
eff. is a fixed capacitance that gives the same charging time as
while V
/ T
J
AS
DS
Jmax
Jmax
1.0ms; duty cycle
= 52A, V
is rising from 0 to 80% V
, starting T
, see Fig.12a, 12b, 15, 16 for typical repetitive
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
GS
Parameter
=10V. Part not recommended for use
J
= 25°C, L = 0.09mH
Parameter
2%.
DSS
.
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min.
Min.
–––
–––
–––
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
55
This is only applied to TO-220AB pakcage.
This is applied to D
Calculated continuous current based on maximum allowable
R
techniques refer to application note #AN-994.
4 or G-10 Material). For recommended footprint and soldering
0.055
current limitations arising from heating of the device leads may
Typ.
Typ.
2880
1500
–––
–––
–––
–––
–––
–––
–––
–––
–––
240
420
220
330
510
–––
–––
–––
junction temperature. Bond wire current limit is 75A. Note that
occur with some lead mounting arrangements.
6.5
4.5
7.5
7.4
40
12
21
17
26
83
16
is measured at T
Max.
Max.
-200
–––
–––
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
340
8.0
3.0
1.3
11
12
20
60
75
24
11
2
Units
Units
Pak, when mounted on 1" square PCB (FR-
J
V/°C
m
µA
nA
nC
nH
nC
pF
ns
ns
of approximately 90°C.
V
V
V
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 43A
= 43A
= 25°C, I
= 25°C, I
= 4.3
= 0V, I
= 10V, I
= 5.0V, I
= 4.5V, I
= V
= 25V, I
= 55V, V
= 55V, V
= 16V
= -16V
= 44V
= 5.0V
= 28V
= 5.0V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
e
e
D
DS
S
F
D
D
DS
DS
= 250µA
D
D
GS
GS
= 250µA
= 43A, V
= 52A
= 52A, V
= 52A
= 43A
= 30A
= 0V to 44V
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
= 0V
= 0V, T
e
Conditions
Conditions
D
e
e
e
= 1mA
GS
DD
J
= 125°C
= 28V
= 0V
f
G
www.irf.com
e
G
D
S
S
D