AUIRF3710ZS International Rectifier, AUIRF3710ZS Datasheet - Page 9
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AUIRF3710ZS
Manufacturer Part Number
AUIRF3710ZS
Description
MOSFET N-CH 100V 59A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRF3710Z.pdf
(14 pages)
Specifications of AUIRF3710ZS
Input Capacitance (ciss) @ Vds
2900pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
59A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Power - Max
160W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
D2-PAK
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
18 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
59 A
Power Dissipation
160 W
Mounting Style
SMD/SMT
Gate Charge Qg
82 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.irf.com
+
-
D.U.T
Fig 17.
+
-
•
•
•
•
SD
•
•
•
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
V
90%
10%
V
DS
GS
-
G
HEXFET
t
d(on)
+
t
r
®
≤ 0.1 %
≤ 1
+
Power MOSFETs
-
Re-Applied
Voltage
Reverse
Recovery
Current
t
d(off)
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
t
P.W.
f
SD
DS
Waveform
Waveform
Ripple ≤ 5%
for N-Channel
Body Diode
+
-
Period
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
9