AUIRF1010ZS International Rectifier, AUIRF1010ZS Datasheet

AUIRF1010ZS

Manufacturer Part Number

AUIRF1010ZS

Description

MOSFET N-CH 55V 94A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.AUIRF1010Z.pdf (15 pages)

Specifications of AUIRF1010ZS

Input Capacitance (ciss) @ Vds

2840pF @ 25V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

7.5 mOhm @ 75A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

75A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

95nC @ 10V

Power - Max

140W

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 leads + Tab), TO-263AB

Transistor Polarity

N Channel

Drain Source Voltage Vds

55V

On Resistance Rds(on)

5.8mohm

Rds(on) Test Voltage Vgs

10V

Operating Temperature Range

-55Â°C To +175Â°C

Transistor Case Style

D2-PAK

Rohs Compliant

Yes

Configuration

Single

Resistance Drain-source Rds (on)

7.5 mOhms

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

94 A

Power Dissipation

140 W

Mounting Style

SMD/SMT

Gate Charge Qg

63 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AUIRF1010ZS

Manufacturer:

Quantity:

12 500

Company:

H&T Electronics

Part Number:

AUIRF1010ZS

Quantity:

9 050

Current page: 1 of 15
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Features

Description

Specifically designed for Automotive applications,

this HEXFET

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of

this design are a 175°C junction operating tempera-

ture, fast switching speed and improved repetitive

avalanche rating . These features combine to make

this design an extremely efficient and reliable device

for use in Automotive applications and a wide variety

of other applications.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings

only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.

Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power

dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T

specified.

HEXFET

*Qualification standards can be found at http://www.irf.com/

Thermal Resistance

STG

θJC

θCS

θJA

@ T

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to

Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

(tested )

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Power MOSFET utilizes the latest

Continuous Drain Current, V

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case )

Mounting Torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount)

AUTOMOTIVE GRADE

Parameter

@ 10V (Silicon Limited)

@ 10V (Package Limited)

AUIRF1010Z

TO-220AB

Gate

D (Silicon Limited)

D (Package Limited)

(BR)DSS

DS(on)

AUIRF1010ZS

See Fig.12a, 12b, 15, 16

Typ.

0.50

–––

Drain

HEXFET

10 lbf

max.

-55 to + 175

Pak

Max.

in (1.1N

0.90

360

140

± 20

130

180

300

AUIRF1010ZS

AUIRF1010ZL

AUIRF1010Z

) is 25°C, unless otherwise

Power MOSFET

Max.

1.11

–––

Source

AUIRF1010ZL

7.5m Ω

55V

94A

75A

TO-262

PD - 97458

Units

W/°C

°C/W

°C

Related parts for AUIRF1010ZS

AUIRF1010ZS Summary of contents

Page 1

... HEXFET Power MOSFET V 55V (BR)DSS R max. 7.5m Ω DS(on) I 94A D (Silicon Limited) I 75A D (Package Limited Pak TO-262 AUIRF1010ZS AUIRF1010ZL D S Drain Source ) is 25°C, unless otherwise A Max 360 140 0.90 ± 20 130 180 See Fig.12a, 12b, 15 175 300 lbf in (1.1N m) Typ ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com † Comments: qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-220AB TO-262 2 ...

Page 4

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 25° 175°C 100 25V ...

Page 5

0V MHZ C iss = SHORTED C rss = C gd 4000 C oss = 3000 Ciss 2000 1000 Coss ...

Page 6

LIMITED BY PACKAGE 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 ...

Page 7

D.U 20V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 8

Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 0.1 1.0E-08 1.0E-07 Fig 15. Typical Avalanche Current Vs.Pulsewidth 140 TOP BOTTOM 10% Duty Cycle 120 75A 100 ...

Page 9

D.U.T + ƒ • • - • + ‚ • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms www.irf.com Driver Gate Drive ...

Page 10

TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com ...

Page 11

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 ...

Page 12

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 www.irf.com ...

Page 13

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Note: For the most ...

Page 14

... Ordering Information Base part Package Type AUIRF1010Z TO-220 AUIRF1010ZL TO-262 AUIRF1010ZS D2Pak 14 Standard Pack Form Quantity Tube 50 Tube 50 Tube 50 Tape and Reel Left 800 Tape and Reel Right 800 Complete Part Number AUIRF1010Z AUIRF1010ZL AUIRF1010ZS AUIRF1010ZSTRL AUIRF1010ZSTRR www.irf.com ...

Page 15

... IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and ...

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