AUIRF1010EZS International Rectifier, AUIRF1010EZS Datasheet - Page 2

• Manufacturer Part Number: AUIRF1010EZS
• Description: MOSFET N-CH 60V 84A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF1010EZS

• Input Capacitance (ciss) @ Vds: 2810pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 51A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 84A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 0.0068ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 140W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 8.5 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 84 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 58 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
ƒ
„
…
Static Electrical Characteristics @ T
V
∆ΒV
R
V
gfs
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
2
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
oss
g
gs
gd
rr
Repetitive rating; pulse width limited by
recommended for use above this value.
I
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
C
charging time as C
0 to 80% V
max. junction temperature. (See fig. 11).
R
T
Limited by T
SD
J
G
oss
DSS
eff.
≤ 175°C.
= 25Ω, I
≤ 51A, di/dt ≤ 260A/µs, V
eff. is a fixed capacitance that gives the same
/∆T
J
DSS
AS
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 51A, V
.
, starting T
oss
Parameter
while V
GS
Parameter
=10V. Part not
Parameter
J
DD
™
= 25°C, L = 0.077mH,
DS
≤ V
is rising from
(BR)DSS
,
J
= 25°C (unless otherwise specified)
J
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min.
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
60
†
‡
ˆ
‰
Limited by T
avalanche performance.
This value determined from sample failure population,
starting T
I
This is applied to D
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
AS
θ
0.058
2810
1440
Typ.
= 51A, V
–––
–––
–––
–––
–––
–––
–––
420
200
320
510
–––
–––
–––
6.8
4.5
7.5
58
19
21
19
90
38
54
41
54
J
Max.
-200
= 25°C, L = 0.077mH, R
–––
–––
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
340
8.5
4.0
1.3
20
86
28
32
84
62
81
GS
Jmax
=10V.
, see Fig.12a, 12b, 15, 16 for typical repetitive
Units
V/°C
mΩ
µA
nA
nC
nH
nC
pF
2
ns
ns
V
V
S
A
V
Pak, when mounted on 1" square PCB
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 51A
= 51A
= 25°C, I
= 25°C, I
= 7.95Ω
= V
= 25V, I
= 60V, V
= 60V, V
= 48V
= 30V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
G
, I
D
f
f
Conditions
Conditions
= 25Ω,
D
Conditions
DS
S
F
D
D
DS
DS
= 250µA
GS
GS
= 250µA
= 51A, V
= 51A, V
= 51A
= 51A
= 0V to 48V
= 1.0V, ƒ = 1.0MHz
= 48V, ƒ = 1.0MHz
= 0V
= 0V, T
f
www.irf.com
f
D
= 1mA
DD
GS
G
J
= 125°C
= 30V
G
= 0V
f
D
S
S
D