AUIRF1010ZL International Rectifier, AUIRF1010ZL Datasheet - Page 2

• Manufacturer Part Number: AUIRF1010ZL
• Description: MOSFET N-CH 55V 94A TO262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF1010ZL

• Input Capacitance (ciss) @ Vds: 2840pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 5.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-262
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 7.5 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 94 A
• Power Dissipation: 140 W
• Mounting Style: Through Hole
• Gate Charge Qg: 63 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant


‚
ƒ
„
Notes:
V
∆V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Static Electrical Characteristics @ T
Dynamic Electrical Characteristics @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
oss
g
gs
gd
rr
Limited by T
Repetitive rating; pulse width limited by
R
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
C
from 0 to 80% V
2
same charging time as C
(BR)DSS
max. junction temperature. (See fig. 11).
recommended for use above this value.
G
oss
eff.
= 25Ω, I
eff. is a fixed capacitance that gives the
/∆T
J
AS
Jmax
= 75A, V
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
, starting T
DSS
.
Parameter
GS
oss
=10V. Part not
J
= 25°C, L = 0.05mH,
while V
Parameter
™
Parameter
DS
is rising
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
…
†
‡
ˆ
‰
Limited by T
This value determined from sample failure population, starting
T
This is only applied to TO-220AB pakcage.
This is applied to D
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
R
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
avalanche performance.
J
θ
Min.
Min.
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
= 25°C, L = 0.05mH, R
55
33
is measured at T
0.049
Typ.
Typ.
2840
1630
Typ.
–––
–––
–––
–––
–––
–––
–––
150
420
250
360
560
–––
–––
–––
5.8
4.5
7.5
63
19
24
18
36
92
22
15
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
Max.
Max.
Max.
-200
–––
–––
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
360
7.5
4.0
1.3
20
95
75
33
23
2
J
Pak, when mounted on 1" square PCB (FR-
approximately 90°C.
G
Units
Units
= 25Ω, I
Units
V/°C
mΩ
µA
nA
nC
nH
nC
ns
pF
ns
V
V
S
A
V
AS
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 75A
= 75A
= 75A, V
= 25°C, I
= 25°C, I
= 6.8 Ω
= V
= 25V, I
= 55V, V
= 55V, V
= 44V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 28V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
e
e
GS
D
DS
S
F
D
D
DS
DS
= 250µA
Conditions
GS
GS
Conditions
= 250µA
Conditions
= 75A, V
= 75A, V
= 75A
= 75A
=10V.
= 0V to 44V
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
= 0V
= 0V, T
e
e
D
= 1mA
DD
www.irf.com
GS
J
= 125°C
= 25V
= 0V
f
e