AUIRLR3705Z International Rectifier, AUIRLR3705Z Datasheet - Page 5

• Manufacturer Part Number: AUIRLR3705Z
• Description: MOSFET N-CH 55V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRLR3705Z

• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 5V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 89A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.0065ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 130W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000.0
5000
4000
3000
2000
1000
100.0
10.0
1.0
0.1
0
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
1
0.2
Drain-to-Source Voltage
T J = 175°C
0.4
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.6
0.8
T J = 25°C
Ciss
Coss
Crss
1.0
f = 1 MHZ
10
1.2
1.4
V GS = 0V
1.6
1.8
2.0
100
10000
1000
100
0.1
10
Fig 8. Maximum Safe Operating Area
12
10
1
8
6
4
2
0
1
Fig 6. Typical Gate Charge vs.
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 42A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
20
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 44V
VDS= 28V
VDS= 11V
40
10msec
10
1msec
DC
100µsec
60
80
100
5
100