AUIRF3710ZSTRL International Rectifier, AUIRF3710ZSTRL Datasheet - Page 5
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AUIRF3710ZSTRL
Manufacturer Part Number
AUIRF3710ZSTRL
Description
MOSFET N-CH 100V 59A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRF3710Z.pdf
(14 pages)
Specifications of AUIRF3710ZSTRL
Input Capacitance (ciss) @ Vds
2900pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
59A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Power - Max
160W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.irf.com
100000
1000.00
10000
100.00
1000
10.00
100
10
1.00
0.10
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
1
0.2
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
0.4
T J = 175°C
V SD , Source-to-Drain Voltage (V)
Forward Voltage
0.6
V
C
C rss
C oss = C ds + C gd
GS = 0V,
iss
= C gd
= C
0.8
T J = 25°C
gs
Ciss
Coss
10
+ C
f = 1 MHZ
1.0
gd
Crss
, C
ds
1.2
V GS = 0V
SHORTED
1.4
100
1.6
12.0
10.0
1000
8.0
6.0
4.0
2.0
0.0
100
0.1
Fig 8. Maximum Safe Operating Area
10
1
0
Fig 6. Typical Gate Charge vs.
1
I D = 35A
Tc = 25°C
Tj = 175°C
Single Pulse
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
20
Q G Total Gate Charge (nC)
V DS = 80V
V DS = 50V
V DS = 20V
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
40
60
100
100μsec
1msec
10msec
80
5
1000
100