AUIRF3710Z International Rectifier, AUIRF3710Z Datasheet - Page 9

• Manufacturer Part Number: AUIRF3710Z
• Description: MOSFET N-CH 100V 59A TO220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF3710Z

• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 18 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 59 A
• Power Dissipation: 160 W
• Mounting Style: Through Hole
• Gate Charge Qg: 82 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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D.U.T
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Fig 17.
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•
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SD
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Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
V
90%
10%
V
DS
GS
-
„
G
HEXFET
t
d(on)
+
t
r
®
≤ 0.1 %
≤ 1
+
Power MOSFETs
-
Re-Applied
Voltage
Reverse
Recovery
Current
t
d(off)
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
t
P.W.
f
SD
DS
Waveform
Waveform
Ripple ≤ 5%
for N-Channel
Body Diode
+
-
Period
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
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