AUIRFR5305 International Rectifier, AUIRFR5305 Datasheet - Page 7
![MOSFET P-CH 55V 31A DPAK](/photos/19/8/190892/ge3dpak05-40_sml.jpg)
AUIRFR5305
Manufacturer Part Number
AUIRFR5305
Description
MOSFET P-CH 55V 31A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRFR5305TRL.pdf
(13 pages)
Specifications of AUIRFR5305
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
65 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
31A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Polarity
P Channel
Continuous Drain Current Id
-31A
Drain Source Voltage Vds
-55V
On Resistance Rds(on)
0.065ohm
Rds(on) Test Voltage Vgs
-10V
Power Dissipation Pd
110W
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
65 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
31 A
Power Dissipation
11 W
Mounting Style
SMD/SMT
Gate Charge Qg
42 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AUIRFR5305
Manufacturer:
IR
Quantity:
12 500
Part Number:
AUIRFR5305
Manufacturer:
IR
Quantity:
20 000
www.irf.com
-10V
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test
V
I
AS
G
R
-20V
Q
G
V DS
GS
t p
I AS
D.U.T
Circuit
t p
0.01 Ω
Charge
Q
L
Q
GD
G
DRIVER
V
(BR)DSS
15V
+
-
V DD
A
700
600
500
400
300
200
100
0
Fig 12c. Maximum Avalanche Energy
25
V
12V
DD
Fig 13b. Gate Charge Test Circuit
Starting T , Junction Temperature (°C)
V
GS
= -25V
Same Type as D.U.T.
50
Current Regulator
.2µF
Vs. Drain Current
J
75
50KΩ
-3mA
AUIRFR/U5305
Current Sampling Resistors
.3µF
I
G
100
D.U.T.
125
TOP
BOTTOM
I
D
+
-
V
150
DS
-11A
-16A
-6.6A
I
D
175
A
7