AUIRFR5305 International Rectifier, AUIRFR5305 Datasheet - Page 7

• Manufacturer Part Number: AUIRFR5305
• Description: MOSFET P-CH 55V 31A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFR5305

• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -31A
• Drain Source Voltage Vds: -55V
• On Resistance Rds(on): 0.065ohm
• Rds(on) Test Voltage Vgs: -10V
• Power Dissipation Pd: 110W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 65 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 31 A
• Power Dissipation: 11 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 42 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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-10V
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test
V
I
AS
G
R
-20V
Q
G
V DS
GS
t p
I AS
D.U.T
Circuit
t p
0.01 Ω
Charge
Q
L
Q
GD
G
DRIVER
V
(BR)DSS
15V
+
-
V DD
A
700
600
500
400
300
200
100
0
Fig 12c. Maximum Avalanche Energy
25
V
12V
DD
Fig 13b. Gate Charge Test Circuit
Starting T , Junction Temperature (°C)
V
GS
= -25V
Same Type as D.U.T.
50
Current Regulator
.2µF
Vs. Drain Current
J
75
50KΩ
-3mA
AUIRFR/U5305
Current Sampling Resistors
.3µF
I
G
100
D.U.T.
125
TOP
BOTTOM
I
D
+
-
V
150
DS
-11A
-16A
-6.6A
I
D
175
A
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