AUIRFR5410 International Rectifier, AUIRFR5410 Datasheet - Page 5

• Manufacturer Part Number: AUIRFR5410
• Description: MOSFET P-CH 100V 13A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFR5410

• Input Capacitance (ciss) @ Vds: 760pF @ 25V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 205 mOhm @ 7.8A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Power - Max: 66W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -13A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 0.205ohm
• Rds(on) Test Voltage Vgs: -10V
• Power Dissipation Pd: 66W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 205 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 66 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 38.7 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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2000
1600
1200
800
400
100
0.1
10
0
1
0.2
1
-V
-V
SD
DS
0.8
T = 150 C
,Source-to-Drain Voltage (V)
V
C
C
C
J
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
C
C
C
rss
iss
oss
T = 25 C
= 0V,
= C
= C
= C
J
°
gs
ds
gd
1.4
°
+ C
+ C
10
gd
gd
f = 1MHz
, C
ds
2.0
V
GS
SHORTED
= 0 V
2.6
100
A
20
15
10
1000
5
0
100
10
0
1
I =
D
1
T
T
Single Pulse
C
J
-8.4A
= 25 C
= 150 C
10
OPERATION IN THIS AREA LIMITED
-V
Q , Total Gate Charge (nC)
DS
G
°
°
, Drain-to-Source Voltage (V)
20
10
BY R
V
V
V
30
DS
DS
DS
DS(on)
FOR TEST CIRCUIT
= -80V
= -50V
= -20V
SEE FIGURE
40
100
10us
100us
1ms
10ms
50
13
5
1000
60