AUIRFR5410TRL International Rectifier, AUIRFR5410TRL Datasheet - Page 2

• Manufacturer Part Number: AUIRFR5410TRL
• Description: MOSFET P-CH 100V 13A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFR5410TRL

• Input Capacitance (ciss) @ Vds: 760pF @ 25V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 205 mOhm @ 7.8A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Power - Max: 66W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Static Electrical Characteristics @ T
V
∆V
R
V
gfs
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
L
L
C
C
C
Diode Characteristics
I
I
V
t
Q
t
Notes:

‚
ƒ
„
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
(BR)DSS
2
I
SD
≤
≤
/∆T
J
≤
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
≤
Parameter
Parameter
Parameter
™
≤
≤
Ω
J
= 25°C (unless otherwise specified)
J
…
†
‡
ˆ
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
R
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
-100
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.2
θ
is measured at Tj approximately 90°C.
-0.12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
760
260
170
–––
–––
–––
130
650
4.5
7.5
15
58
45
46
0.205
-250
-100
-4.0
-1.6
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
190
970
-25
8.3
-13
-52
58
32
V/°C
µA
nA
nC
nH
nC
pF
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
= -8.4A
= -8.4A
= 25°C, I
= 25°C, I
= 6.2Ω
= 9.1Ω
= V
= -25V, I
= -100V, V
= -80V, V
= -80V
= =-50V
= -25V
= 0V, I
= -10V, I
= 20V
= -20V
= -10V
= 0V
GS
, I
fh
D
Conditions
Conditions
Conditions
fh
D
S
F
h
= -250µA
D
D
= -250µA
= -8.4A
GS
= -7.8A, V
= -7.8A
= -7.8A
GS
fh
= 0V, T
= 0V
www.irf.com
D
= -1mA
f
G
J
GS
= 150°C
G
= 0V
S
D
f
D
S