AUIRFR5505TR International Rectifier, AUIRFR5505TR Datasheet

AUIRFR5505TR

Manufacturer Part Number

AUIRFR5505TR

Description

MOSFET P-CH 55V 18A DPAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.AUIRFR5505TRL.pdf (13 pages)

Specifications of AUIRFR5505TR

Input Capacitance (ciss) @ Vds

650pF @ 25V

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

110 mOhm @ 9.6A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

18A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

32nC @ 10V

Power - Max

57W

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Features

Specifically designed for Automotive applications, this

Cellular design of HEXFET® Power MOSFETs utilizes

the latest processing techniques to achieve low on-

resistance per silicon area. This benefit combined with the

fast switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in Automotive and a wide variety of other

applications.

Description

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated

in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect

device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still

air conditions. Ambient temperature (T

dv/dt

Thermal Resistance

HEXFET

*Qualification standards can be found at http://www.irf.com/

STG

θJC

θJA

@ T

Advanced Planar Technology

Low On-Resistance

P-Channel

Dynamic dV/dT Rating

150°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy(Thermally limited)

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient (PCB mount) **

Junction-to-Ambient

) is 25°C, unless otherwise specified.

Parameter

AUTOMOTIVE GRADE

@ -10V

Gate

AUIRFR5505

D-Pak

Typ.

–––

300 (1.6mm from case )

-55 to + 150

AUIRFR5505

AUIRFU5505

HEXFET

Drain

Max.

0.45

± 20

150

-9.6

-5.0

-18

-11

-64

5.7

(BR)DSS

DS(on)

AUIRFU5505

I-Pak

Max.

110

2.2

max.

Power MOSFET

Source

PD - 96342

0.11Ω

-55V

-18A

Units

W/°C

°C/W

V/ns

°C

Related parts for AUIRFR5505TR

AUIRFR5505TR Summary of contents

Page 1

... Storage Temperature Range T STG Soldering Temperature, for 10 seconds Thermal Resistance R Junction-to-Case θJC R Junction-to-Ambient (PCB mount) ** θJA R Junction-to-Ambient θJA ® HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com AUTOMOTIVE GRADE Gate ) is 25°C, unless otherwise specified. A Parameter @ -10V GS @ -10V GS d Ã ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension ...

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Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent • • • • G • SD • P.W. Period D = Period Body ...

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TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 12

... Ordering Information Base part Package Type AUIRFR5505 DPak AUIRFU5505 IPak 12 Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 Tube 75 Complete Part Number AUIRFR5505 AUIRFR5505TR AUIRFR5505TRL AUIRFR5505TRR AUIRFU5505 www.irf.com ...

Page 13

... Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and ...

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