AUIRFR4105Z International Rectifier, AUIRFR4105Z Datasheet - Page 12

• Manufacturer Part Number: AUIRFR4105Z
• Description: MOSFET N-CH 55V 30A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFR4105Z

• Input Capacitance (ciss) @ Vds: 740pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Power - Max: 48W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Notes:
12
Repetitive rating; pulse width limited by
Pulse width
R
recommended for use above this value.
C
same charging time as C
from 0 to 80% V
max. junction temperature. (See fig. 11).
Limited by T
oss
G
= 25 , I
eff. is a fixed capacitance that gives the
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
12.1 ( .476 )
11.9 ( .469 )
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
AS
Jmax
= 18A, V
1.0ms; duty cycle
DSS
, starting T
13 INCH
.
GS
oss
=10V. Part not
TR
J
while V
= 25°C, L = 0.18mH
2%.
DS
FEED DIRECTION
is rising
16.3 ( .641 )
15.7 ( .619 )
…
†
‡
ˆ
Limited by T
This value determined from sample failure population,
starting T
When mounted on 1" square PCB (FR-4 or G-10 Material) .
application note #AN-994.
R is measured at TJ approximately 90°C.
For recommended footprint and soldering techniques refer to
avalanche performance.
J
= 25°C, L = 0.18mH, R
8.1 ( .318 )
7.9 ( .312 )
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
TRR
16 mm
TRL
G
= 25 , I
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
AS
= 18A, V
www.irf.com
GS
=10V.