AUIRLR024N International Rectifier, AUIRLR024N Datasheet

AUIRLR024N

Manufacturer Part Number

AUIRLR024N

Description

MOSFET N-CH 55V 17A DPAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.AUIRLR024NTRL.pdf (13 pages)

Specifications of AUIRLR024N

Input Capacitance (ciss) @ Vds

480pF @ 25V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

65 mOhm @ 10A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

17A

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

15nC @ 5V

Power - Max

45W

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Polarity

N Channel

Continuous Drain Current Id

17A

Drain Source Voltage Vds

55V

On Resistance Rds(on)

0.065ohm

Rds(on) Test Voltage Vgs

10V

Power Dissipation Pd

45W

Operating

RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AUIRLR024N

Manufacturer:

Quantity:

12 500

Current page: 1 of 13
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Features

Description

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated

in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect

device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still

air conditions. Ambient temperature (T

HEXFET

*Qualification standards can be found at http://www.irf.com/

Specifically designed for Automotive applications, this

Cellular design of HEXFET® Power MOSFETs utilizes

the latest processing techniques to achieve low on-

resistance per silicon area. This benefit combined with

the fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient and

reliable device for use in Automotive and a wide variety of

other applications.

dv/dt

Thermal Resistance

STG

θJC

θJA

@ T

Advanced Planar Technology

Low On-Resistance

Logic-Level Gate Drive

Dynamic dV/dT Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient (PCB mount) **

Junction-to-Ambient

) is 25°C, unless otherwise specified.

Parameter

AUTOMOTIVE GRADE

@ 10V

Gate

AUIRLR024N

D-Pak

Typ.

–––

300 (1.6mm from case )

AUIRLR024N

AUIRLU024N

-55 to + 175

HEXFET

Drain

(BR)DSS

Max.

DS(on)

± 16

0.3

4.5

5.0

AUIRLU024N

Max.

max.

I-Pak

110

3.3

Power MOSFET

Source

0.065Ω

17A

55V

Units

W/°C

°C/W

V/ns

01/18/11

°C

Related parts for AUIRLR024N

AUIRLR024N Summary of contents

Page 1

... International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com AUTOMOTIVE GRADE G D AUIRLR024N G Gate ) is 25°C, unless otherwise specified. A Parameter @ 10V GS @ 10V GS d Ã e Parameter AUIRLR024N AUIRLU024N ® HEXFET Power MOSFET D V 55V (BR)DSS R max. 0.065Ω DS(on) I 17A ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com † (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of ...

Page 4

VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2. 2.5V 20µs PULSE WIDTH T = 25°C J 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T = 25°C ...

Page 5

iss rss oss ds C iss 600 400 C oss 200 C rss Drain-to-Source Voltage ...

Page 6

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) 0.01 ...

Page 7

D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic ...

Page 8

D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel 8 + • • ƒ • - „ - • • • ...

Page 9

www.irf.com 9 ...

Page 10

10 www.irf.com ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 12

... Ordering Information Base part Package Type AUIRLR024N DPak AUIRLU024N IPak 12 Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 Tube 75 Complete Part Number AUIRLR024N AUIRLR024NTR AUIRLR024NTRL AUIRLR024NTRR AUIRLU024N www.irf.com ...

Page 13

... IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and ...

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