IRLR3636TRLPBF International Rectifier, IRLR3636TRLPBF Datasheet - Page 3

MOSFET N-CH 60V 50A DPAK

IRLR3636TRLPBF

Manufacturer Part Number
IRLR3636TRLPBF
Description
MOSFET N-CH 60V 50A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLR3636TRLPBF

Input Capacitance (ciss) @ Vds
3779pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.8 mohm @ 50A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2.5V @ 100µA
Gate Charge (qg) @ Vgs
49nC @ 4.5V
Power - Max
143W
Mounting Type
*
Package / Case
*
Transistor Polarity
N Channel
Continuous Drain Current Id
99A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
5.4mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.irf.com
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
100000
10000
1000
1000
1000
100
100
100
0.1
0.1
10
10
1
1
0.1
Fig 3. Typical Transfer Characteristics
1
1
Fig 1. Typical Output Characteristics
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
3
1
C oss
≤ 60µs PULSE WIDTH
Tj = 25°C
2.7V
C rss
T J = 25°C
C iss
V DS = 25V
≤60µs PULSE WIDTH
10
4
f = 1 MHZ
10
5
TOP
BOTTOM
6
VGS
15V
10V
4.5V
4.0V
3.5V
3.3V
3.0V
2.7V
100
100
7
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
1.0
0.5
10
1
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
0
Fig 2. Typical Output Characteristics
TOP
BOTTOM
I D = 50A
I D = 50A
V GS = 10V
5
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G , Total Gate Charge (nC)
10
VGS
15V
10V
4.5V
4.0V
3.5V
3.3V
3.0V
2.7V
1
V DS = 48V
VDS= 30V
V DS = 12V
15
2.7V
≤ 60µs PULSE WIDTH
Tj = 175°C
IRLR/U3636PbF
20
25
10
30
35
100
40
3

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