AUIRLR2703TRR International Rectifier, AUIRLR2703TRR Datasheet

AUIRLR2703TRR

Manufacturer Part Number

AUIRLR2703TRR

Description

MOSFET N-CH 30V 20A DPAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.AUIRLR2703TRL.pdf (12 pages)

Specifications of AUIRLR2703TRR

Input Capacitance (ciss) @ Vds

450pF @ 25V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

45 mOhm @ 14A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

20A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

15nC @ 4.5V

Power - Max

45W

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Description

Specifically designed for Automotive applications,

this cellular design of HEXFET® Power MOSFETs

utilizes the latest processing techniques to achieve

low on-resistance per silicon area. This benefit

combined with the fast switching speed and

ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in Automotive and a wide variety of other applications.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T

www.irf.com

• Advanced Planar Technology

• Logic-Level Gate Drive

• Low On-Resistance

• Dynamic dV/dT Rating

• 175°C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Repetitive Avalanche Allowed up to Tjmax

• Lead-Free, RoHS Compliant

• Automotive Qualified*

HEXFET

*Qualification standards can be found at http://www.irf.com/

dv/dt

Thermal Resistance

STG

θJC

θJA

@ T

(tested )

= 25°C Continuous Drain Current, V

= 100°C Continuous Drain Current, V

= 25°C Continuous Drain Current, V

= 25°C Power Dissipation

is a registered trademark of International Rectifier.

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case )

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

) is 25°C, unless otherwise specified.

Parameter

@ 10V (Silicon Limited)

@ 10V

@ 10V (Package Limited)

Gate

HEXFET Power MOSFET

AUIRLR2703

D (Silicon Limited)

D (Package Limited)

Typ.

(BR)DSS

–––

DS(on)

Drain

D-Pak

-55 to + 175

Max.

0.30

300

± 16

200

4.5

5.0

max.

Max.

110

3.3

Source

45m Ω

30V

23A

20A

01/11/2011

Units

W/°C

°C/W

V/ns

°C

Related parts for AUIRLR2703TRR

AUIRLR2703TRR Summary of contents

Page 1

... Soldering Temperature, for 10 seconds (1.6mm from case ) Thermal Resistance j R Junction-to-Case θJC R Junction-to-Ambient (PCB mount) θJA R Junction-to-Ambient θJA ® HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com HEXFET Power MOSFET D V (BR)DSS R DS(on (Silicon Limited (Package Limited) ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension ...

Page 4

VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 100 3.0V BOTTOM 2. 2.5V 20µs PULSE WIDTH T = 25°C J 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T ...

Page 5

1MHz iss rss oss ds gd 800 C iss 600 C oss 400 C rss ...

Page 6

LIMITED BY PACKAGE 100 125 ° Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 0.01 ...

Page 7

D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. ...

Page 8

D.U.T + ‚ - Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple ≤ 5% Fig 14. For N-Channel HEXFETS 8 • + • ƒ ...

Page 9

D-Pak Part Marking Information www.irf.com 9 ...

Page 10

TR 12.1 ( .476 ) FEED DIRECTION 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. ...

Page 11

... Ordering Information Base part Package Type number AUIRLR2703 Dpak www.irf.com Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 Complete Part Number AUIRLR2703 AUIRLR2703TR AUIRLR2703TRL AUIRLR2703TRR 11 ...

Page 12

... IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and ...

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