AUIRF7640S2TR International Rectifier, AUIRF7640S2TR Datasheet - Page 6

• Manufacturer Part Number: AUIRF7640S2TR
• Description: MOSFET N-CH 60V 77A DIRECTFET-S2
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF7640S2TR

• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 36 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 5V @ 25µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Power - Max: 2.4W
• Mounting Type: *
• Package / Case: *
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 36 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 2.4 W
• Gate Charge Qg: 7.3 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
Fig 13. Maximum Safe Operating Area
0.001
1000
100
0.01
0.1
10
100
0.1
0.1
10
1.0E-06
1
10
1E-006
1
1
0
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
Tc = 25°C
Tj = 175°C
Single Pulse
Duty Cycle = Single Pulse
V DS , Drain-toSource Voltage (V)
D = 0.50
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
1.0E-05
0.01
0.05
0.10
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
Fig 16. Typical Avalanche Current Vs.Pulsewidth
DC
1msec
10
10msec
100μsec
t 1 , Rectangular Pulse Duration (sec)
1.0E-04
0.0001
100
tav (sec)
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
Fig 14. Maximum Avalanche Energy vs. Temperature
i/Ri
R
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Δ Tj = 150°C and
Tstart =25°C (Single Pulse)
160
140
120
100
1
R
80
60
40
20
1
0
1.0E-03
0.001
τ
25
2
R
τ
2
2
R
2
Starting T J , Junction Temperature (°C)
R
50
τ
3
3
R
τ
3
3
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
R
4
τ
75
4
R
4
4
τ
C
τ
Ri (°C/W)
1.0E-02
0.49687
0.00517
2.55852
1.94004
0.01
100
TOP
BOTTOM 13A
125
0.000119
8.231486
0.018926
0.002741
τi (sec)
I D
2.5A
4.8A
150
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1.0E-01
0.1
175