IRL6342TRPBF International Rectifier, IRL6342TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRL6342TRPBF
• Description: MOSFET N-CH 30V 9.9A 8SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL6342TRPBF

• Input Capacitance (ciss) @ Vds: 1025pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.6 mOhm @ 9.9A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.9A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14.6 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 9.9 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 11 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRL6342PbF
Fig 7. Typical Source-Drain Diode Forward Voltage
4
100
1.0
10
10
8
6
4
2
0
0.001
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
25
0.01
100
0.1
Fig 9. Maximum Drain Current vs.
10
1E-006
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
Case (Bottom) Temperature
V SD , Source-to-Drain Voltage (V)
50
T J = 150°C
T C , Case Temperature (°C)
D = 0.50
0.10
0.02
0.20
0.05
0.01
1E-005
75
SINGLE PULSE
( THERMAL RESPONSE )
100
T J = 25°C
0.0001
V GS = 0V
125
t 1 , Rectangular Pulse Duration (sec)
0.001
150
0.01
1000
Fig 10. Threshold Voltage vs. Temperature
100
0.1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
0.1
1
0.1
-75 -50 -25
Fig 8. Maximum Safe Operating Area
T A = 25°C
Tj = 150°C
Single Pulse
I D = 10µA
I D = 250µA
I D = 1.0mA
DC
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
V DS , Drain-to-Source Voltage (V)
1
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10msec
1.0
0
1msec
25
10
50
100µsec
75 100 125 150
10
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100
100