EPC2001 EPC, EPC2001 Datasheet

EPC2001

Manufacturer Part Number

EPC2001

Description

TRANS GAN 100V 25A BUMPED DIE

Manufacturer

EPC

Series

eGaN™r

Datasheet

1.EPC2001.pdf (5 pages)

Specifications of EPC2001

Mfg Application Notes

Second Generation eGaN® FETs

Rohs Information

Lead Free/RoHS Statement

Input Capacitance (ciss) @ Vds

850pF @ 50V

Fet Type

GaNFET N-Channel, Gallium Nitride

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

7 mOhm @ 25A, 5V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

25A

Vgs(th) (max) @ Id

2.5V @ 5mA

Gate Charge (qg) @ Vgs

8nC @ 5V

Mounting Type

Surface Mount

Package / Case

Die Outline (11-Solder Bar)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Power - Max

Other names

917-1014-2

Current page: 1 of 5
Download datasheet (3Mb)

eGaN™ FET DATASHEET

Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leverag-

ing the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high elec-

tron mobility and low temperature coefficient allows very low R

and majority carrier diode provide exceptionally low Q

can handle tasks where very high switching frequency, and low on-time are beneficial as well as

those where on-state losses dominate.

All measurements were done with substrate shorted to source.

EPC2001 – Enhancement Mode Power Transistor

Note 1: R

Static Characteristics (T

Source-Drain Characteristics (T

DSS

DS(ON)

, 25 A

STG

See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.

, 100 V

DS(ON)

GS(th)

DSS

GSS

is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.

DSS

, 7 mW

θ JC

θ JB

θ JA

Drain-to-Source Voltage

Continuous (T

Pulsed (25˚C, Tpulse = 300 µs)

Gate-to-Source Voltage

Operating Temperature

Storage Temperature

Gate-Source Forward Leakage

Source-Drain Forward Voltage

Gate-Source Reverse Leakage

PARAMETER

Drain-Source On Resistance

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Board

Thermal Resistance, Junction to Ambient (Note 1)

Drain-to-Source Voltage

Gate Threshold Voltage

Drain Source Leakage

= 25˚C unless otherwise stated)

= 25˚C, θ

= 25˚C unless otherwise stated)

Maximum Ratings

= 20)

PRELIMINARY

and zero Q

= 0.5 A, V

DS(ON)

Thermal Characteristics

TEST CONDITIONS

-40 to 125

-40 to 150

= 0 V, I

, while its lateral device structure

= 80 V, V

= V

= 5 V, I

. The end result is a device that

100

-5

= -5 V

, I

= 5 V

= 0 V, T = 125˚C

= 0 V, T = 25˚C

= 300 µA

= 5 mA

= 25 A

= 0 V

˚C

MIN

100

0.7

EPC2001 eGaN™ FETs are supplied only in

passivated die form with solder bars

Applications

• High Speed DC-DC conversion

• Class D Audio

• Hard Switched and High Frequency Circuits

Benefits

• Ultra High Efficiency

• Ultra Low R

• Ultra low Q

• Ultra small footprint

EFFICIENT POWER CONVERSION

1.75

100

TYP

0.2

1.4

5.6

1.8

TYP

1.6

DS(on)

MAX

250

2.5

HAL

˚C/W

EPC2001

| PAGE 1

UNIT

mΩ

µA

Related parts for EPC2001

EPC2001 Summary of contents

Page 1

... 0 25˚ 0 125˚ Thermal Characteristics EFFICIENT POWER CONVERSION HAL EPC2001 eGaN™ FETs are supplied only in passivated die form with solder bars Applications • High Speed DC-DC conversion V • Class D Audio • Hard Switched and High Frequency Circuits A Benefits • Ultra High Efficiency V • Ultra Low R DS(on) • Ultra low Q G • Ultra small footprint ˚ ...

Page 2

... Figure 2: Transfer Characteristics 25˚C 125˚ 1 – Gate-to-Source Voltage (V) GS Figure for Various Temperature DS(on) GS 2.5 3 3.5 4 4.5 V – Gate-to-Source Voltage (V) GS Figure 6: Gate Charge EPC2001 UNIT pF nC 3.5 4 4.5 25˚C 125˚ 5.5 | PAGE 2 ...

Page 3

... V – Gate-to-Source Voltage (V) GS Figure 6: Gate Charge – Gate Charge (nC) G Figure 8: Normalized On Resistance Vs Temperature – Junction Temperature ( ˚ Figure 10: Gate Current 25˚C 125˚ – Gate-to-Source Voltage (V) GS EPC2001 8 10 100 120 140 PAGE 3 ...

Page 4

... Gate Pad solder bar is under this corner EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | Normalized Maximum Transient Thermal Impedance Single Pulse Rectangular Pulse Duration, seconds EPC2001 (note 1) target min max a 12.0 11.7 12.3 b 1.75 1.65 1.85 5.50 5.45 5.55 d 4.00 3.90 4 ...

Page 5

... Pad no Gate; Pads no are Drain; Pads no are Source; Pad no Substrate. EPC2001 MAX 4135 1662 1385 583 265 205 400 Information subject to change without notice. ...

Related keywords

EPC2001 datasheet
EPC2001 data sheet
EPC2001 pdf datasheet
EPC2001 component
EPC2001 part
EPC2001 distributor
EPC2001 RoHS
EPC2001 datasheet download