EPC2015 EPC, EPC2015 Datasheet

EPC2015

Manufacturer Part Number

EPC2015

Description

TRANS GAN 40V 33A BUMPED DIE

Manufacturer

EPC

Series

eGaN™r

Datasheet

1.EPC2015.pdf (5 pages)

Specifications of EPC2015

Mfg Application Notes

Second Generation eGaN® FETs

Rohs Information

Lead Free/RoHS Statement

Input Capacitance (ciss) @ Vds

1100pF @ 20V

Fet Type

GaNFET N-Channel, Gallium Nitride

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

4 mOhm @ 33A, 5V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

33A

Vgs(th) (max) @ Id

2.5V @ 9mA

Gate Charge (qg) @ Vgs

10.5nC @ 5V

Mounting Type

Surface Mount

Package / Case

Die Outline (11-Solder Bar)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Power - Max

Other names

917-1019-2

Current page: 1 of 5
Download datasheet (2Mb)

eGaN™ FET DATASHEET

EPC2015 – Enhancement Mode Power Transistor

Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leverag-

ing the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high elec-

tron mobility and low temperature coefficient allows very low R

and majority carrier diode provide exceptionally low Q

can handle tasks where very high switching frequency, and low on-time are beneficial as well as

those where on-state losses dominate.

All measurements were done with substrate shorted to source.

Note 1: R

Static Characteristics (T

Source-Drain Characteristics (T

DSS

DS(ON)

, 33 A

, 40 V

See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.

STG

DS(ON)

GS(TH)

DSS

GSS

, 4 mW

is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.

DSS

θ JC

θ JB

θ JA

Drain-to-Source Voltage

Continuous (T

Pulsed (25˚C, Tpulse = 300 µs)

Gate-to-Source Voltage

Operating Temperature

Storage Temperature

Gate-Source Forward Leakage

Source-Drain Forward Voltage

PARAMETER

Gate-Source Reverse Leakage

Drain-Source On Resistance

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Board

Thermal Resistance, Junction to Ambient (Note 1)

Drain-to-Source Voltage

Gate Threshold Voltage

Drain Source Leakage

= 25˚C unless otherwise stated)

= 25˚C, θ

= 25˚C unless otherwise stated)

Maximum Ratings

= 23)

PRELIMINARY

and zero Q

= 0.5 A, V

DS(ON)

Thermal Characteristics

-40 to 150

TEST CONDITIONS

, while its lateral device structure

= 0 V, I

= 32 V, V

= V

= 5 V, I

. The end result is a device that

150

-5

= -5 V

, I

= 0 V, T = 150˚C

= 5 V

= 0 V, T = 25˚C

= 500 µA

= 9 mA

= 33 A

= 0 V

˚C

MIN

0.7

EPC2015 eGaN™ FETs are supplied only in

passivated die form with solder bars

Applications

• High Speed DC-DC conversion

• Class D Audio

• Hard Switched and High Frequency Circuits

Benefits

• Ultra High Efficiency

• Ultra Low R

• Ultra low Q

• Ultra small footprint

EFFICIENT POWER CONVERSION

1.75

200

TYP

1.5

0.3

1.4

3.2

1.8

TYP

1.6

DS(on)

MAX

400

1.5

2.5

HAL

˚C/W

EPC2015

| PAGE 1

UNIT

mΩ

µA

Related parts for EPC2015

EPC2015 Summary of contents

Page 1

... 0 25˚ 0 150˚ Thermal Characteristics EFFICIENT POWER CONVERSION HAL EPC2015 eGaN™ FETs are supplied only in passivated die form with solder bars Applications • High Speed DC-DC conversion V • Class D Audio • Hard Switched and High Frequency Circuits A Benefits • Ultra High Efficiency V • Ultra Low R DS(on) • Ultra low Q G • Ultra small footprint ˚ ...

Page 2

... Figure 2: Transfer Characteristics 25˚C 125˚ 0.5 1 1 – Gate-to-Source Voltage (V) GS Figure for Various Temperature DS(on 2.5 3 3.5 4 4.5 V – Gate-to-Source Voltage (V) GS Figure 6: Gate Charge EPC2015 UNIT pF nC 3.5 4 4.5 25˚C 125˚ 5.5 | PAGE 2 ...

Page 3

... Figure 8: Normalized On Resistance Vs Temperature 3 3.5 4 4.5 -20 Figure 10: Gate Current .025 .02 .015 .01 .005 0 0 100 120 140 V – Gate-to-Source Voltage ( – Gate Charge (nC 100 120 T – Junction Temperature ( ˚ 25˚C 125˚ – Gate-to-Source Voltage (V) GS EPC2015 10 12 140 PAGE 3 ...

Page 4

... EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | Normalized Maximum Transient Thermal Impedance Single Pulse Rectangular Pulse Duration, seconds EPC2015 (note 1) target min max 12.0 11.7 12.3 1.75 1.65 1.85 5.50 5.45 5.55 4.00 3.90 4.10 4.00 3 ...

Page 5

... Pad no Gate; Pads no are Drain; Pads no are Source; Pad no Substrate. EPC2015 MAX 4135 1662 1385 583 265 205 400 Information subject to change without notice. ...

Related keywords

EPC2015 datasheet
EPC2015 data sheet
EPC2015 pdf datasheet
EPC2015 component
EPC2015 part
EPC2015 distributor
EPC2015 RoHS
EPC2015 datasheet download