IRFHS9301TR2PBF International Rectifier, IRFHS9301TR2PBF Datasheet - Page 4

• Manufacturer Part Number: IRFHS9301TR2PBF
• Description: MOSFET P-CH 30V 6A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFHS9301TR2PBF

• Input Capacitance (ciss) @ Vds: 580pF @ 25V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 37 mOhm @ 7.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 2.4V @ 25µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: 6-PowerVQFN
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 65 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 13 A
• Power Dissipation: 2.1 W
• Gate Charge Qg: 6.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFHS9301TR2PBFTR

Fig 7. Typical Source-Drain Diode Forward Voltage
4
0.001
0.01
100
100
1.0
Fig 9. Maximum Drain Current vs.
0.1
10
14
12
10
10
8
6
4
2
0
1
1E-006
0.4
25
D = 0.50
Case Temperature
-V SD , Source-to-Drain Voltage (V)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.05
0.02
0.01
0.10
50
SINGLE PULSE
( THERMAL RESPONSE )
T C , Case Temperature (°C)
T J = 150°C
0.6
LIMITED BY PACKAGE
75
1E-005
T J = 25°C
100
0.8
V GS = 0V
125
t 1 , Rectangular Pulse Duration (sec)
0.0001
150
1.0
Fig 10. Threshold Voltage vs. Temperature
0.001
1000
0.01
2.0
1.5
1.0
0.5
100
0.1
Fig 8. Maximum Safe Operating Area
10
1
-75 -50 -25
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
V DS , Drain-to-Source Voltage (V)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
0
1
0.01
25
1msec
50
I D = -25uA
DC
75 100 125 150
10
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100μsec
10msec
0.1
100