DMP3010LPS-13 Diodes Inc, DMP3010LPS-13 Datasheet - Page 2

• Manufacturer Part Number: DMP3010LPS-13
• Description: MOSFET P-CH 30V 14.5A POWERDI
• Manufacturer: Diodes Inc

Specifications of DMP3010LPS-13

• Input Capacitance (ciss) @ Vds: 6234pF @ 15V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14.5A
• Vgs(th) (max) @ Id: 2.1V @ 250µA
• Gate Charge (qg) @ Vgs: 126.2nC @ 10V
• Power - Max: 2.18W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMP3010LPS-13DITR

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
Continuous Drain Current (Note 5) V
Continuous Drain Current (Note 4) V
Pulsed Drain Current (Notes 4 & 7)
Avalanche Current (Notes 8 & 9)
Repetitive Avalanche Energy (Notes 8 & 9) L = 1mH
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T
Power Dissipation (Notes 5 & 6)
Thermal Resistance, Junction to Case @T
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
Total Gate Charge (V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMP3010LPS
Document number: DS32239 Rev. 4 - 2
4. Device mounted on FR-4 PCB with 1 inch square 2 oz. Copper, single sided.
5. Device mounted on FR-4 PCB with infinite heatsink.
6. R
7. Repetitive rating, pulse width limited by junction temperature, 10μs pulse, duty cycle = 1%.
8. I
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
AR
θJC
and E
is guaranteed by design while R
AR
GS
GS
Characteristic
rating are based on low frequency and duty cycles to keep T
= -10V)
= -4.5V)
@T
A
= 25°C unless otherwise specified
GS
GS
GS
Characteristic
Characteristic
= 10V
= 4.5V
= 10V
@T
C
= 25°C (Notes 5 & 6)
A
θCA
A
A
= 25°C unless otherwise specified
= 25°C (Note 4)
= 25°C (Note 5)
is determined by the user’s board design.
Steady
Steady
Steady
State
State
State
Symbol
R
BV
V
www.diodes.com
DS (ON)
t
t
I
I
C
|Y
V
C
GS(th)
C
Q
Q
D(on)
D(off)
DSS
GSS
R
Q
Q
oss
t
t
SD
rss
DSS
iss
gs
gd
r
fs
f
g
g
g
|
2 of 6
Min
-1.1
J
-30
T
T
T
T
T
T
= 25°C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
A
A
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
= 25°C
= 70°C
126.2
260.7
-0.65
6234
1500
1.28
59.2
16.1
15.7
11.4
99.3
Typ
-1.6
774
5.7
7.2
9.4
30
-
-
-
±100
Max
-1.0
-2.1
-1.0
7.5
10
T
Symbol
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Symbol
J
V
R
R
R
V
, T
E
P
P
P
I
I
DSS
GSS
DM
θJA
θJA
θJC
I
I
I
AR
D
D
D
AR
D
D
D
STG
Unit
mΩ
nC
nC
nC
nC
μA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
Ω
-55 to +150
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
I
V
R
D
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
DS
DS
DS
G
= -10A
Value
Value
14.37
-14.5
-11.5
-17.5
2.18
58.7
2.13
-100
= 6Ω, I
±20
153
-30
-36
-29
-31
-25
8.7
55
= 0V, I
= -30V, V
= ±20V, V
= V
= -10V, I
= -4.5V, I
= -15V, I
= 0V, I
= 15V, V
= 0V, V
= -15V, I
= -15V, V
= -15V, V
GS
Test Condition
DMP3010LPS
D
, I
D
S
GS
D
= -1A
= -1A
= -250μA
D
D
D
GS
D
GS
GS
GEN
= -250μA
DS
= -10A
= -10A
= 0V, f = 1MHz
= -10A
= -10A
= 0V,
© Diodes Incorporated
= 0V
= -4.5V,
= 0V
= -10V,
February 2011
°C/W
°C/W
°C/W
Unit
Unit
mJ
°C
W
W
W
V
V
A
A
A
A
A