HTC-2512LF30K1F IRC, HTC-2512LF30K1F Datasheet

Thick Film Resistors - SMD 2512 30Kohm 1%

HTC-2512LF30K1F

Manufacturer Part Number

HTC-2512LF30K1F

Description

Thick Film Resistors - SMD 2512 30Kohm 1%

Manufacturer

IRC

Datasheet

1.HTC-1206LF5K11F.pdf (2 pages)

Specifications of HTC-2512LF30K1F

Resistance

30.1 KOhms

Tolerance

1 %

Power Rating

750 mWatts

Termination Style

SMD/SMT

Package / Case

2512 (6431 metric)

Voltage Rating

500 Volts

Operating Temperature Range

- 55 C to + 200 C

Dimensions

3.2 mm W x 6.5 mm L x 0.8 mm H

Product

Thick Film Resistors SMD

Temperature Coefficient

+/- 100 PPM / C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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High Temperature

Thick Film Chip Resistors

•

Electrical Data

General Note

IRC reserves the right to make changes in product specification without notice or liability.

All information is subject to IRC’s own data and is considered accurate at time of going to print.

Advanced Film Division

Telephone: 361 992 7900 • Facsimile: 361 992 3377 • Website: www.irctt.com

Note

Environmental Data

Note

Characteristic

Resistance Range

150°C Power Rating

Max Voltage Rating

Absolute TCR

Operating Temperature

Pad/Trace Area

Termination

Test

Load Life

High Temperature Exposure

Short Time Overload

Moisture Resistance

Thermal Shock

Resistance to Soldering Heat

Solderability

HTC Series

Operation to 200°C

Excellent high temperature stability

Improved working voltage ratings

Pb-free wrap-around terminations

Standard chip sizes available from 1206 to 2512

: Recommended minimum pad and adjacent trace area for each termination for rated power on

: 0.01W added for all resistance values <10W.

• 4222 South Staples Street • Corpus Christi Texas 78411 USA

MIL-STD-202 Method 107G Condition B

(Rated Power for 1000hrs @ 150°C)

200mW

80mm

200V

1206

(6.25X rated power for 5secs)

MIL-STD-202 Method 106G

MIL-STD-202 Method 210F

MIL-STD-202 Method 108

MIL-STD-202 Method 208

1000 hours @ 200°C

(245°C, 5 seconds)

MIL-PRF-55342H

Wrap-around Pb-free with leach resistant Ni barrier

Method

1W to 10MW; ±1%, ±5%

10W to 1MW; ±0.5%, ±5%, ±1%

-55°C to +200°C

± 100ppm/°C

200mm

500mW

FR4 PCB.

400V

2010

Maximum

1.00%

0.25%

>95% Coverage

Specification

300mm

750mW

2512

500V

Typical

HTC Series Issue July 2009

0.25%

0.20%

0.10%

0.25%

0.05%

TTelectronics plc

A subsidiary of

Related parts for HTC-2512LF30K1F

HTC-2512LF30K1F Summary of contents

Page 1

... MIL-STD-202 Method 107G Condition B MIL-STD-202 Method 210F MIL-STD-202 Method 208 (245°C, 5 seconds) 2512 750mW 500V 2 300mm 2 Specification Maximum Typical 2 1.00% 0.25% 1.00% 0.20% 1.00% 0.10% 1.00% 0.25% 0.25% 0.05% 0.25% 0.05% >95% Coverage A subsidiary of TTelectronics plc HTC Series Issue July 2009 ...

Page 2

... For additional information or to discuss your specific requirements, please contact our Applications Team using the contact details below. Protective Overcoat Sn Plating Ni Barrier Layer B min (mm) C (mm) Weight (grams) 0.4±0.2 1.7 0.020 0.6±0.3 3.0 0.036 0.6±0.3 4.4 0.055 TKC - HTC - 2512LF - 100R - F HTC Series Issue July 2009 ...

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