NTE5438 NTE ELECTRONICS, NTE5438 Datasheet - Page 2
NTE5438
Manufacturer Part Number
NTE5438
Description
Replacement Semiconductors G/P SCR
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5438.pdf
(2 pages)
Specifications of NTE5438
Peak Repetitive Off-state Voltage, Vdrm
600V
Gate Trigger Current Max, Igt
0.2mA
Current It Av
5.1A
On State Rms Current It(rms)
8A
Peak Non Rep Surge Current Itsm 50hz
80A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Electrical Characteristics (Cont’d): (T
On−State Voltage
On−State Threshold Voltage
On−State Slope Resistance
Gate Trigger Current
Gate Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
Critical Rate of Current Rise
Gate Controlled Delay Time
Commutated Turn−Off Time
Parameter
.147 (3.75)
.070 (1.78) Max
Dia Max
Symbol
V
dv/dt
di/dt
Cathode
V
T(TO)
I
V
t
GT
I
r
I
t
gd
GT
.100 (2.54)
H
T
L
q
T
I
T
T
V
V
R
R
V
I
I
T
T
G
G
J
J
C
D
D
D
GK
GK
= 16A, T
= 10mA, di
= 10mA, di
A
= +125°C
= +125°C
= +85°C, V
= 7V
= 7V
= .67 x V
= 1kΩ
= 1kΩ
= +25°C unless otherwise specified)
.420 (10.67)
J
DRM
= +25°C
Max
G
G
D
/dt = 0.1A/μs, T
/dt = 0.1A/μs
Anode
= .67 x V
Test Conditions
, R
GK
= 1kΩ, T
DRM
.250 (6.35)
Max
, V
J
Gate
Anode
R
J
= +125°C
.110 (2.79)
= +125°C
= 35V, I
(12.7)
(12.7)
.500
Max
.500
Min
T
= 5.1A
Min
100
−
−
−
−
−
−
−
5
−
−
Max
1.95
1.05
200
500
100
2.0
65
10
20
−
−
V/μs
A/μs
Unit
mΩ
mA
mA
μA
μs
ns
V
V
V