NTE154 NTE ELECTRONICS, NTE154 Datasheet - Page 2

Replacement Semiconductors TO-39 NPN HIV OUTPUT

NTE154

Manufacturer Part Number
NTE154
Description
Replacement Semiconductors TO-39 NPN HIV OUTPUT
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE154

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
300V
Transition Frequency Typ Ft
50MHz
Power Dissipation Pd
1W
Dc Collector Current
200mA
Dc Current Gain Hfe
40
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electrical Characteristics: (T
Note 2. This rating refers to a high current point where collector to emitter voltage is lowest.
Note 5. Pulse Conditions: Length = 300 s, Duty Cycle = 1%.
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Emitter Sustaining Voltage
Base Emitter Saturating Voltage
Collector Emitter Saturating Voltage
High Frequency Current Gain
Collector Base Capacitance
Emitter Base Capacitance
Parameter
A
= +25 C unless otherwise specified)
Emitter
V
V
V
Symbol
V
V
CEO(sus)
(BR)CBO
(BR)EBO
(12.7)
I
I
BE(sat)
CE(sat)
(6.6)
.260
Max
.500
h
C
C
CBO
EBO
Min
h
FE
fe
cb
eb
45
I
I
I
I
I
I
I
I
I
I
I
I
I
I
R
I
I
C
E
E
E
C
C
C
C
C
C
C
C
C
C
E
C
L
= 100 A, I
= 0, V
= 0, V
= 0, V
= 100 A, I
= 0, V
= 1mA, V
= 10mA, V
= 30mA, V
= 5mA, I
= 20mA, I
= 20mA, I
= 15mA, V
= 3mA, V
= 30mA, V
= 0, V
.031 (.793)
= 9k
CB
CB
EB
CB
EB
Test Conditions
B
= 200V, T
= 200V
= 6V
= 20V
= 500mV
CE
CE
B
B
E
C
= 0, Note 2, Note 5
.018 (0.45)
CE
CE
CE
CE
= 2mA, Note 5
= 2mA, Note 5
= 0
= 0
= 20V
= 270V, f = 20MHz
Base
Collector/Case
= 20V, Note 5
= 20V, Note 5
= 150V, f = 20MHz
= 30V, f = 20MHz,
.370 (9.39) Dia Max
.355 (9.03) Dia Max
A
= +125 C
Min
300
300
2.5
2.0
2.0
20
40
40
7
0.35
Typ
100
100
0
1.0
0.2
1.0
4.0
2.5
4.0
2.5
50
45
.74
Max
0.85
100
100
5.0
1.0
3.0
70
Unit
nA
nA
pF
pF
V
V
V
V
V
A

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