NTE108 NTE ELECTRONICS, NTE108 Datasheet - Page 2

• Manufacturer Part Number: NTE108
• Description: Replacement Semiconductors TO-92 NPN RF/IF AMP
• Manufacturer: NTE ELECTRONICS

Specifications of NTE108

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 15V
• Transition Frequency Typ Ft: 600MHz
• Power Dissipation Pd: 625mW
• Dc Collector Current: 50mA
• Dc Current Gain Hfe: 20
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics (Cont’d): (T
Note 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 1%.
ON Characteristics
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Small−Signal Characteristics
Current Gain−Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
Functional Test
Common−Emitter Amplifier Power
Gain
Power Output
Oscillator Collector Efficiency
TO92
.105 (2.67) Max
.205 (5.2) Max
.100 (2.54)
(5.33)
(12.7)
.210
Max
.500
Min
Parameter
E B C
.050 (1.27)
.135 (3.45) Min
(4.2)
.165
Max
.105 (2.67) Max
Seating Plane
.021 (.445) Dia Max
Symbol
V
V
CE(sat)
BE(sat)
C
C
P
G
h
NF
f
obo
η
FE
out
ibo
T
pe
A
= +25°C unless otherwise specified)
I
I
I
I
I
f = 100MHz, Note 2
V
V
V
I
R
I
f = 200MHz (G
I
f = 500MHz
I
P
C
C
C
C
C
C
C
C
C
CB
CB
EB
out
S
= 6mA, V
= 3mA, V
= 8mA, V
= 10mA, I
= 10mA, I
= 4mA, V
= 1mA, V
= 8mA, V
= 8mA, V
= 400Ω, f = 60MHz
= 0.5V, I
= 0V, I
= 10V, I
= 30mW, f = 500MHz
Test Conditions
TO106
Seating
Plane
E
CB
CE
CE
CE
CE
CB
CB
B
B
E
C
= 0, f = 140kHz
= 0, f = 140kHz
= 1mA
= 1mA
fd
= 12V,
= 0, f = 140kHz
= 1V, Note 2
= 10V, Note 2
= 10V,
= 6V,
= 15V,
= 15V,
E
+ G
(1.52)
.060
Min
re
< −20dB)
.018 (0.45)
Min Typ Max Unit
600
20
20
15
30
25
−
−
−
−
−
−
.100 (2.54) Dia
.207 (5.28) Dia
B
−
−
−
−
−
−
−
−
−
−
−
−
C
200
(4.57)
(12.7)
0.4
1.0
3.0
1.7
2.0
.180
.500
Min
−
−
6
−
−
−
MHz
mW
pF
pF
pF
dB
dB
%
V
V