NTE399 NTE ELECTRONICS, NTE399 Datasheet
NTE399
Manufacturer Part Number
NTE399
Description
Replacement Semiconductors TO-92 NPN HI-V AMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE399.pdf
(2 pages)
Specifications of NTE399
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
300V
Transition Frequency Typ Ft
50MHz
Power Dissipation Pd
900mW
Dc Collector Current
100mA
Dc Current Gain Hfe
220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain–Bandwidth Product
Output Capacitance
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
CBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Voltage Video Amp
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
= +25 C unless otherwise specified)
(Compl to NTE2366)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
Symbol
V
V
CE(sat)
I
I
BE(sat)
h
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
EBO
f
FE
T
ob
NTE399
V
V
V
V
V
I
I
C
C
CB
EB
CE
CB
CB
= 20mA, I
= 20mA, I
= 200V, I
= 6V, I
= 10V, I
= 30V, I
= 10V, f = 1MHz
Test Conditions
C
C
C
B
B
= 0
E
= 5mA
= 10mA
= 2mA
= 2mA
= 0
Min
100
50
–
–
–
–
–
Typ
–
–
–
–
–
–
–
–55 to +150 C
Max
220
1.0
1.0
7.5
0.6
1.0
–
900mW
+150 C
100mA
300mA
MHz
300V
300V
Unit
pF
V
V
A
A
6V
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NTE399 Summary of contents
Page 1
... Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current Gain–Bandwidth Product Output Capacitance Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage NTE399 Silicon NPN Transistor High Voltage Video Amp (Compl to NTE2366 CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Max .512 (13.0) Min .100 (2.54) .240 (6.09) Max Seating Plane .026 (.66) Dia Max .200 (5.08) Max ...