NTE2383 NTE ELECTRONICS, NTE2383 Datasheet - Page 2

Replacement Semiconductors TO-220 P-CH MOSFET

NTE2383

Manufacturer Part Number
NTE2383
Description
Replacement Semiconductors TO-220 P-CH MOSFET
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE2383

Transistor Polarity
P Channel
Continuous Drain Current Id
10.5A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
300mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
Electrical Characteristics: (T
Note 2. Pulse Test: Pulse Width
Note 3. Repetitive rating: Pulse width limited by max. junction temperature.
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current, Forward
Gate–Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain–Source On–Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain (“Miller”) Charge
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
(Body Diode)
Parameter
C
= +25 C unless otherwise specified)
V
Symbol
V
r
300 s, Duty Cycle
(BR)DSS
DS(on)
t
t
I
I
I
C
C
V
C
Q
GS(th)
g
d(on)
Q
GSS
GSS
d(off)
I
DSS
Q
SM
I
t
FS
oss
t
t
SD
rss
iss
S
rr
gd
r
f
gs
g
V
V
V
V
V
V
V
V
V
V
MOSFET switching times are
essentially independent of operating
essentially independent of operating
temperature
V
Gate charge is essentially
independent of operating
independent of operating
temperature
Note 3
T
Note 2
T
dI
J
J
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
GS
F
= +25 C, I
= +25 C, I
/dt = 100A/ s
= 100V, V
= 80V, V
= V
= 25V, V
= 0, I
= 20V
= 20V
= 10V, I
= 50V, I
= 10V, V
50V, I
GS
Test Conditions
D
, I
= 0.25mA
D
D
D
D
GS
GS
S
F
DS
= 5.3A, Note 2
= 5.3A, Note 2
= 10.5A, Z
GS
= 0.25mA
= 10.5A,
= 10.5A, V
2%.
= 0, T
= 0, f = 1MHz
= 80V, I
= 0
J
= +125 C
D
O
GS
= 10.5A,
= 24 ,
= 0V,
Min
100
2.0
2.0
12.6
16.6
Typ
835
357
94
–100
Max
0.25
10.5
100
140
140
140
300
1.0
4.0
0.3
6.3
60
58
42
mhos
Unit
mA
mA
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
V
V
A
A
V

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