NTE2389 NTE ELECTRONICS, NTE2389 Datasheet - Page 2

• Manufacturer Part Number: NTE2389
• Description: Replacement Semiconductors MOSFET N CHN
• Manufacturer: NTE ELECTRONICS

Specifications of NTE2389

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 35A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 45mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Electrical Characteristics (Cont’d): (T
Dynamic Ratings (Cont’d)
Turn–On Time
Turn–Off Time
Internal Drain Inductance
Internal Source Inductance
Reverse Diode
Continuous Reverse Drain Current
Pulsed Reverse Drain Current
Diode Forward On–Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
.147 (3.75)
.070 (1.78) Max
Dia Max
.100 (2.54)
Symbol
Gate
t
t
I
d (on)
d (off)
V
DRM
I
Q
L
L
DR
t
t
t
SD
rr
r
f
d
s
rr
A
= +25 C unless otherwise specified)
V
I
Measured from contact screw
on tab to center of die
Measured from drain lead 6mm
from package to center of die
Measured from source lead
6mm from package to source
bond pad
I
I
–di
D
F
F
CC
.420 (10.67)
= 41A, V
= 41A, V
= 3A, R
F
/dt = 100A/ s
= 30V, V
Max
Test Conditions
GS
GS
GS
GS
= 50
= 0
= 0, V
.250 (6.35)
= 10V,
Max
Source
Drain/Tab
R
= 30V
(12.7)
(12.7)
.500
.500
.110 (2.79)
Max
Min
Min
–
–
–
–
–
–
–
–
–
–
–
–
Typ
125
100
3.5
4.5
7.5
1.4
0.3
25
60
60
–
–
Max
160
130
164
2.0
40
90
41
–
–
–
–
–
Unit
nH
nH
nH
ns
ns
ns
ns
ns
A
A
V
C