NTE384 NTE ELECTRONICS, NTE384 Datasheet
NTE384
Manufacturer Part Number
NTE384
Description
Replacement Semiconductors TO-66 NPN HIV PWRAMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE384.pdf
(2 pages)
Specifications of NTE384
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
350V
Power Dissipation Pd
45W
Dc Collector Current
7A
Dc Current Gain Hfe
28
Operating Temperature Range
-65°C To +200°C
No. Of Pins
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a
multiple–emitter site structure. Multiple–epitaxial construction maximizes the volt–ampere character-
istic of the device and provides fast switching speeds. Multiple–emitter design ensures uniform cur-
rent flow throughout the structure, which produces a high I
The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line.
The leakage current is specified at 450V; therefore the device can also be used in a series bridge
configuration on a 220V line. The V
inverter applications.
Features:
D Maximum Safe–Area–of–Operation
D Low Saturation Voltages
D High Voltage Rating: V
D High Dissipation Rating: P
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Sustaining Voltage
Emitter–Base Voltage, V
Collector Current, I
Continuous Base Current, I
Transistor Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1/32 in. (0.8mm) from case, 10sec max), T
Thermal Resistance, Junction to Case (V
With Base Open, V
With Reverse Bias (V
With External Base–Emitter Resistance (R
Continuous
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
EBO
CEO(sus)
High Voltage Power Amp/Switch
CBO
CER(sus)
B
+25 C, V
BE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
) of –1.5V, V
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 45W
Silicon NPN Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 375V
EBO
CE
rating of 9V eases requirements on the drive transformer in
CE
opr
40V), P
CEX(sus)
NTE384
= 20V, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BE
T
)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= 2.25A), R
50 , V
S/b
and a large safe–operation–area.
CER(sus)
JC
. . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . .
L
. . . . . . .
–65 to +200 C
–65 to +200 C
3.9 C/W
+230 C
375V
350V
375V
375V
45W
10A
9V
7A
4A
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NTE384 Summary of contents
Page 1
... High Voltage Power Amp/Switch Description: The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a multiple–emitter site structure. Multiple–epitaxial construction maximizes the volt–ampere character- istic of the device and provides fast switching speeds. Multiple–emitter design ensures uniform cur- rent flow throughout the structure, which produces a high I The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line ...
Page 2
Electrical Characteristics: (T Parameter Collector–Cutoff Current Emitter–Cutoff Current Collector–Emitter Sustaining Voltage V Emitter–Base Voltage DC Forward Current Base–Emitter Saturation Voltage Collector–Emitter Saturation Voltage Output Capacitance Small–Signal Forward Current Transfer Ratio Second Breakdown Collector Current Second Breakdown Energy Delay Time Rise ...