NTE263 NTE ELECTRONICS, NTE263 Datasheet - Page 2

• Manufacturer Part Number: NTE263
• Description: Replacement Semiconductors TO-220 NPN DAR PWR
• Manufacturer: NTE ELECTRONICS

Specifications of NTE263

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 100V
• Power Dissipation Pd: 65W
• Dc Collector Current: 10A
• Dc Current Gain Hfe: 20000
• Operating Temperature Range: -65°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Dynamic Characteristics
Small–Signal Current Gain
Output Capacitance
Small–Signal Current Gain
B
B
Parameter
NTE263
NTE264
C
V
Symbol
V
V
CEO(sus)
= +25 C unless otherwise specified)
C
E
C
E
I
I
CE(sat)
I
BE(on)
|h
C
CEO
h
CEX
EBO
h
FE
ob
fe
fe
300 s, Duty Cycle
|
I
V
V
V
V
I
I
I
I
I
I
I
V
I
C
C
C
C
C
C
C
C
C
CE
CE
CE
BE
CB
= 200mA, I
= 5A, V
= 10A, V
= 5A, I
= 10A, I
= 3A, V
= 10A, V
= 1A, V
= 1A, V
= 100V, V
= 5V, I
= 100V, I
= 100V, V
= 10V, I
B
CE
CE
CE
CE
B
.147 (3.75)
.070 (1.78) Max
C
= 0.01A
CE
CE
Test Conditions
Dia Max
= 0.1A
E
= 0
= 3V
= 3V
= 5V, f
= 5V, f = 1kHz
B
B
EB(off)
= 0, f = 1MHz
EB(off)
= 3V
= 3V
= 0
= 0, Note 1
.100 (2.54)
test
2%.
= 1.5V, T
Base
= 1.5V
= 1MHz
C
.420 (10.67)
= +125 C
Max
.250 (6.35)
1000
1000
Min
100
100
20
–
–
–
–
–
–
–
–
–
Max
Collector/Tab
Emitter
.110 (2.79)
(12.7)
(12.7)
Typ
.500
.500
Max
Min
–
–
–
–
–
–
–
–
–
–
–
–
–
–
20000
Max
300
200
1.0
2.8
4.5
–
3
5
–
2
3
–
–
Unit
mA
mA
mA
pF
V
V
V
V
V
A