NTE243 NTE ELECTRONICS, NTE243 Datasheet - Page 2

Replacement Semiconductors TO-3 NPN DAR PWR AMP

NTE243

Manufacturer Part Number
NTE243
Description
Replacement Semiconductors TO-3 NPN DAR PWR AMP
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE243

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation Pd
100W
Dc Collector Current
8A
Dc Current Gain Hfe
750
Operating Temperature Range
-65°C To +200°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Electrical Characteristics (Cont’d): (T
Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Base–Emitter ON Voltage
Dynamic Characteristics
Small–Signal Current Gain
Magnitude of Common Emitter
Output Capacitance
B
B
NTE244
Small–Signal Short–Circuit
Forward Current Transfer Ratio
NTE243
Parameter
NTE243
NTE244
Symbol
V
V
V
CE(sat)
BE(sat)
BE(on)
h
|h
C
C
E
C
E
h
FE
fe
fe
ob
|
A
.350 (8.89)
V
V
I
I
I
V
V
V
V
C
C
C
= +25 C unless otherwise specified)
CE
CE
CE
CE
CE
CB
= 4A, I
= 8A, I
= 8A, I
= 3V, I
= 3V, I
= 3V, I
= 3V, I
= 3V, I
= 10V, I
.215 (5.45)
(10.92)
.430
B
B
B
C
C
= 16mA
= 80mA
= 80mA
C
C
C
Test Conditions
E
= 4A
= 8A
= 4A
= 3A, f = 1kHz
= 3A, f = 1MHz
.312 (7.93) Min
Emitter
= 0, f = 0.1MHz
Base
.135 (3.45) Max
1.187 (30.16)
.875 (22.2)
Dia Max
Collector/Case
(16.9)
.665
.040 (1.02)
Min
750
100
300
4.0
.525 (13.35) R Max
Typ
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
18000
Max
200
300
2.0
3.0
4.0
2.8
Seating
Plane
MHz
Unit
pF
pF
V
V
V
V

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