NTE123AP NTE ELECTRONICS, NTE123AP Datasheet - Page 2

• Manufacturer Part Number: NTE123AP
• Description: Replacement Semiconductors NPN 40V 600mA HFE/300
• Manufacturer: NTE ELECTRONICS

Specifications of NTE123AP

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 40V
• Transition Frequency Typ Ft: 250MHz
• Power Dissipation Pd: 625mW
• Dc Collector Current: 600mA
• Dc Current Gain Hfe: 300
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Electrical Characteristics (Cont’d): (T
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
ON Characteristics (Note 1) (Cont’d)
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Small−Signal Characteristics
Current Gain−Bandwidth Product
Collector−Base Capacitance
Emitter−Base Capacitance
Input Impedance
Voltage Feedback Ratio
Small−Signal Current Gain
Output Admittance
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
Parameter
Symbol
V
V
CE(sat)
BE(sat)
C
C
h
h
h
h
f
t
t
t
t
oe
T
cb
eb
ie
re
fe
d
s
r
f
A
= +25°C unless otherwise specified)
I
I
I
I
I
V
V
I
I
I
I
V
I
I
V
I
I
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
CC
CC
= 150mA, I
= 500mA, I
= 150mA, I
= 500mA, I
= 20mA, V
= 1mA, V
= 1mA, V
= 1mA, V
= 1mA, V
= 150mA, I
= I
150mA I
= 5V, I
= 0.5V, I
= 30V, V
= 30V, I
I
B2
= 15mA
Test Conditions
15mA
E
CE
CE
CE
CE
C
= 0, f = 100kHz
C
CE
EB(off)
B
B
B
B
B1
= 150mA,
= 0, f = 100kHz
= 10V, f = 1kHz
= 10V, f = 1kHz
= 10V, f = 1kHz
= 10V, f = 1kHz
= 15mA
= 50mA
= 15mA
= 50mA
(
= 10V, f = 100MHz
= 15mA
)
15mA
= 2V,
0.75
Min
250
1.0
0.1
1.0
40
−
−
−
−
−
−
−
−
−
Typ
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.75
0.95
500
225
0.4
1.2
6.5
8.0
30
15
30
15
20
30
−
µmhos
x 10
MHz
Unit
kΩ
pF
pF
ns
ns
ns
ns
V
V
V
V
−6