DG419BDQ-T1-E3 Vishay, DG419BDQ-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: DG419BDQ-T1-E3
• Description: Analog Switch ICs Single SPDT 20/25V
• Manufacturer: Vishay
• Type: Analog Switchr

Specifications of DG419BDQ-T1-E3

• Number Of Switches: Single
• Switch Configuration: SPDT
• On Resistance (max): 35 Ohms @ 12 V
• On Time (max): 125 ns @ 12 V
• Off Time (max): 66 ns @ 12 V
• Off Isolation (typ): - 82 dB
• Supply Voltage (max): 25 V
• Supply Current: 0.000001 mA @ +/- 16.5 V
• Maximum Power Dissipation: 400 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: MSOP
• Minimum Operating Temperature: - 40 C
• Off State Leakage Current (max): 12 nA
• Propagation Delay Time: 87 ns @ +/- 15V/119 ns @ 12V
• Analog Switch Type: SPDT
• No. Of Channels: 1
• On State Resistance Max: 15ohm
• Turn Off Time: 38ns
• Turn On Time: 100ns
• Supply Voltage Range: 10.8V To 13.2V
• Package: 8MSOP
• Maximum On Resistance: 35@10.8V Ohm
• Maximum Propagation Delay Bus To Bus: 87@±15V|119@12V ns
• Maximum High Level Output Current: 30 mA
• Number Of Channels Per Chip: 1
• Maximum Turn-off Time: 80@±15V ns
• Maximum Turn-on Time: 125@12V ns
• Switch Architecture: SPDT
• Power Supply Type: Single|Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SCHEMATIC DIAGRAM Typical Channel
Document Number: 72107
S09-1261-Rev. D, 13-Jul-09
SPECIFICATIONS
Parameter
Analog Switch
Analog Signal Range
Drain-Source
On-Resistance
Switch Off Leakage Current
Channel On Leakage Current
Digital Control
Input Current, V
Input Current, V
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Transition Time
Break-Before-Make
Time Delay
Charge Injection
Off Isolation
Channel-to-Channel
Crosstalk
e
e
GND
V
V
IN
V+
V -
L
IN
IN
Low
High
e
a
V
Symbol
R
t
ANALOG
TRANS
OIRR
X
I
I
I
t
DS(on)
D(off)
D(on)
S(off)
t
OFF
TALK
I
I
ON
t
Q
IH
IL
D
V
V
D
V
V+ = 16.5 V, V- = - 16.5 V
S
V+ = 16.5, V- = - 16.5 V
R
R
S1
=
R
=
L
L
V
L
V
Unless Otherwise Specified
±
=
= 300 Ω, C
±
Time Test Circuit
= 300 Ω, C
I
S
V
= 300 Ω, C
S1
S
V+ = 13.5 V, V- = - 13.5 V
15.5 V, V
±
L
= V
10 V, See Switching
= - 10 mA, V
V
V+ = 15 V, V- = - 15 V
= V
R
= 5 V, V
10 V, V
gen
L
Test Conditions
D
= 50 Ω, C
S2
=
= 0 V, R
C
f = 1 MHz
±
=
L
S
L
L
S2
IN
L
15.5 V
±
= 10 nF
=
Level
Drive
= 35 pF
= 35 pF
Shift/
= 35 pF
= 2.4 V, 0.8 V
10 V
=
±
D
±
gen
15.5 V
L
=
10 V
= 5 pF,
Figure 1.
±
= 0 Ω
12.5 V
DG417B
DG418B
DG419B
DG417B
DG418B
DG419B
DG417B
DG418B
DG417B
DG418B
DG419B
DG419B
DG419B
f
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
DG417B, DG418B, DG419B
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
b
Typ.
-
-
-
-
-
- 82
- 88
15
62
53
60
16
38
0.1
0.1
0.1
0.4
0.4
c
- 55 °C to 125 °C
- 0.25
- 0.25
- 0.75
- 0.75
Min.
- 0.4
- 0.5
- 0.5
- 15
- 20
- 20
- 60
- 40
- 60
3
A Suffix
d
Max.
0.25
0.25
0.75
0.75
106
0.4
0.5
0.5
15
25
34
20
20
60
40
60
89
80
88
87
96
Vishay Siliconix
d
V -
V+
- 40 °C to 85 °C
- 0.25
- 0.25
- 0.75
- 0.75
Min.
- 0.4
- 0.5
- 0.5
- 15
- 12
- 10
- 12
- 5
- 5
3
D Suffix
d
www.vishay.com
D
S
Max.
0.25
0.25
0.75
0.75
0.4
0.5
0.5
15
25
29
12
10
12
89
99
80
86
87
93
5
5
d
Unit
nA
µA
pC
dB
ns
Ω
V
3