DG419BDQ-T1-E3 Vishay, DG419BDQ-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: DG419BDQ-T1-E3
• Description: Analog Switch ICs Single SPDT 20/25V
• Manufacturer: Vishay
• Type: Analog Switchr

Specifications of DG419BDQ-T1-E3

• Number Of Switches: Single
• Switch Configuration: SPDT
• On Resistance (max): 35 Ohms @ 12 V
• On Time (max): 125 ns @ 12 V
• Off Time (max): 66 ns @ 12 V
• Off Isolation (typ): - 82 dB
• Supply Voltage (max): 25 V
• Supply Current: 0.000001 mA @ +/- 16.5 V
• Maximum Power Dissipation: 400 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: MSOP
• Minimum Operating Temperature: - 40 C
• Off State Leakage Current (max): 12 nA
• Propagation Delay Time: 87 ns @ +/- 15V/119 ns @ 12V
• Analog Switch Type: SPDT
• No. Of Channels: 1
• On State Resistance Max: 15ohm
• Turn Off Time: 38ns
• Turn On Time: 100ns
• Supply Voltage Range: 10.8V To 13.2V
• Package: 8MSOP
• Maximum On Resistance: 35@10.8V Ohm
• Maximum Propagation Delay Bus To Bus: 87@±15V|119@12V ns
• Maximum High Level Output Current: 30 mA
• Number Of Channels Per Chip: 1
• Maximum Turn-off Time: 80@±15V ns
• Maximum Turn-on Time: 125@12V ns
• Switch Architecture: SPDT
• Power Supply Type: Single|Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SCHEMATIC DIAGRAM Typical Channel
Document Number: 70051
S10-1528-Rev. G, 19-Jul-10
SPECIFICATIONS
Parameter
Analog Switch
Analog Signal Range
Drain-Source
On-Resistance
Switch Off Leakage
Current
Channel Off Leakage
Current
Digital Control
Input Current V
Input Current V
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Transition Time
Break-Before-Make
Time Delay (DG403)
Charge Injection
GND
V
V
IN
V+
V-
L
IN
IN
Low
High
e
V
Symbol
a
R
t
ANALOG
TRANS
I
I
I
DS(on)
t
S(off)
D(off)
D(on)
t
OFF
I
I
ON
t
Q
IH
IL
D
V
V+ = 16.5 V, V- = - 16.5 V
S1
C
V+ = 16.5, V- = - 16.5 V
R
R
R
L
Unless Otherwise Specified
L
See Switching Time
L
L
V
V
=
I
= 10 nF, V
V
= 300 , C
= 300 , C
= 300 , C
S
S
S1
V+ = 13.5 V, V- = - 13.5 V
L
±
V
V
= - 10 mA, V
= V
V
V+ = 15 V, V- = - 15 V
= 5 V, V
Test Circuit
D
S
= V
10 V, V
S
Test Conditions
=
=
D
=
S2
±
±
=
±
15.5 V
15.5 V
±
=
gen
10 V
S2
IN
L
L
L
±
15.5 V
= 35 pF
= 35 pF
= 35 pF
Level
Drive
Shift/
= 2.4 V, 0.8 V
=
= 0 V, R
10 V
D
±
=
10 V
±
12.5 V
gen
Figure 1.
DG417
DG418
DG419
DG417
DG418
DG419
DG417
DG418
DG417
DG418
DG419
DG419
= 0 
f
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
b
0.005
0.005
Typ.
- 0.1
- 0.1
- 0.1
- 0.4
- 0.4
100
20
60
13
60
DG417, DG418, DG419
c
- 55 °C to 125 °C
Min.
- 0.25
- 0.25
- 0.75
- 0.75
- 0.4
- 0.5
- 0.5
- 15
- 20
- 20
- 60
- 40
- 60
5
A Suffix
d
Max.
0.25
0.25
0.75
0.75
175
250
145
210
175
250
0.4
0.5
0.5
15
35
45
20
20
60
40
60
Vishay Siliconix
d
- 40 °C to 85 °C
- 0.25
- 0.25
- 0.75
- 0.75
Min.
- 0.4
- 0.5
- 0.5
- 15
- 12
- 10
- 12
- 5
- 5
5
V+
V-
D Suffix
d
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Max.
0.25
0.25
0.75
0.75
175
250
145
210
175
250
0.4
0.5
0.5
15
35
45
12
10
12
S
D
5
5
d
Unit
µA
pC
nA
ns
V

3