ZXGD3003E6TA Diodes Inc, ZXGD3003E6TA Datasheet - Page 4

• Manufacturer Part Number: ZXGD3003E6TA
• Description: MOSFET & Power Driver ICs 5A Gate Driver Mosfet
• Manufacturer: Diodes Inc
• Type: High Speedr

Specifications of ZXGD3003E6TA

• Rise Time: 77 ns
• Fall Time: 85 ns
• Maximum Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: 1
• Number Of Outputs: 1
• Package / Case: SOT23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics (at Tamb = 25°C unless otherwise stated).
Issue 2 - October 2007
© Zetex Semiconductors plc 2007
Parameter
Output voltage, high
Output voltage, low
Source output leakage
current
Sink output leakage
current
Quiescent current
Source output current I
Sink output current
Source output current I
Sink output current
Gate driver
switching times
Gate driver
switching times
Switching time test circuits
Symbol
V
V
I
I
I
I
I
t
t
t
t
t
t
t
t
L(source)
L(sink)
Q
(source)
(sink)
(source)PK
(sink)PK
d(rise)
r
d(fall)
f
d(rise)
r
d(fall)
f
OH
OL
Min.
1
1
V
CC
4
Typ.
0.4
1.6
1.4
1.8
8.9
1.7
8.9
77
85
5
5
4
4
– 0.4
Max.
20
1
1
Timing diagram
Unit Conditions
nA
ns
ns
ns
ns
ns
ns
ns
ns
A
A
A
A
V
V
A
A
ZXGD3003E6
I
I
V
V
V
V
V
V
I
I
I
I
C
V
R
C
V
R
source
sink
IN1
IN1
IN1
IN1
CC
IN1
CC
IN1
CC
IN1
L
CC
S
L
CC
S
=1nF, R
=1nF, R
=25
=1k
+I
+I
+I
+I
=12V, V
=12V, V
= 40V,
= 40V,
= 32V,
= 1 A
= V
= V
= V
IN2
IN2
IN2
IN2
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= 1 A
IN2
IN2
IN2
= 10mA
= 10mA
= 500mA
= 500mA
L
L
=1 ,
=1 ,
= 0V
= V
= 0V
IN
IN
=10V,
=10V,
CC