ZXGD3002E6TA Diodes Inc, ZXGD3002E6TA Datasheet - Page 3

• Manufacturer Part Number: ZXGD3002E6TA
• Description: MOSFET & Power Driver ICs 9A Gate Driver Mosfet
• Manufacturer: Diodes Inc
• Type: High Speedr

Specifications of ZXGD3002E6TA

• Rise Time: 105 ns
• Fall Time: 115 ns
• Maximum Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: 1
• Number Of Outputs: 1
• Package / Case: SOT23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute maximum ratings
Thermal resistance
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
(b) For device with two active dice running at equal power.
(c) Pulse width <=300 s limit repetition rate to comply with maximum junction temperature.
Issue 1 - October 2007
© Zetex Semiconductors plc 2007
Parameter
Supply voltage
Input voltage
Peak sink current
Source current @ I
Sink current @ I
Input current
Power dissipation at T
Linear derating factor
Operating and storage temperature range
Parameter
Junction to ambient
still air conditions.
(c)
IN1
(c)
IN1
+ I
(a)(b)
A
IN2
+ I
=25°C
IN2
=10mA
=10mA
(a)(b)
(a)
(a)
3
Symbol
I
Symbol
I
I
IN1
T
(sink)PK
(source)
I
R
j
V
(sink)
V
, T
P
, I
CC
IN
D
JA
stg
IN2
ZXGD3002E6
-55 to +150
Value
Limit
113
2.2
1.1
8.8
20
20
9
2
1
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mW/°C
°C/W
Unit
Unit
°C
W
A
A
A
A
V
V