S29GL01GP12TFI010 Spansion Inc., S29GL01GP12TFI010 Datasheet - Page 59

• Manufacturer Part Number: S29GL01GP12TFI010
• Description: Flash 3V 1 Gb Mirrorbit highest address120ns
• Manufacturer: Spansion Inc.

Specifications of S29GL01GP12TFI010

• Memory Type: NOR
• Memory Size: 1 Gbit
• Access Time: 110 ns
• Data Bus Width: 8 bit, 16 bit
• Architecture: Uniform
• Interface Type: Page-mode
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 50 mA
• Mounting Style: SMD/SMT
• Operating Temperature: + 85 C
• Package / Case: TSOP-56
• Memory Configuration: 128K X 16
• Ic Interface Type: Parallel
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: BGA
• No. Of Pins: 56
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Notes
1. Not 100% tested.
2. See
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 110 ns speed option are tested with
November 28, 2007 S29GL-P_00_A8
t
t
JEDEC
WHWH1
WHWH2
t
t
t
t
t
t
t
t
t
t
WHDX
WHEH
WLWH
DVWH
GHWL
WHDL
11.7.3
AVWL
WLAX
ELWL
V
AVAV
IO
Parameter
= V
Section 11.6
CC
t
t
WHWH1
WHWH2
t
= 2.7 V. AC specifications for 110 ns speed options are tested with V
t
t
t
OEPH
GHWL
t
Std.
t
t
CEPH
t
t
BUSY
t
t
t
WPH
ASO
t
t
t
t
t
VHH
VCS
t
AHT
SEA
WC
WP
AS
AH
DS
DH
CS
CH
S29GL-P Erase and Program Operations
for more information.
Description
Write Cycle Time
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE# or OE# high during toggle bit polling
Data Setup Time
Data Hold Time
CE# High during toggle bit polling
Output Enable High during toggle bit polling
Read Recovery Time Before Write (OE# High to WE# Low)
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Effective Write Buffer Program Operation (Notes 2, 4)
Accelerated Effective Write Buffer Program Operation
(Notes 2, 4)
Program Operation
Accelerated Programming Operation
Sector Erase Operation
V
V
Erase/Program Valid to RY/BY# Delay
Sector Erase Timeout
HH
CC
RESET#
Rise and Fall Time
Setup Time
CE#
V
V
CC
IO
D a t a
(Note 1)
V
V
(Note 1)
CC
IO
Table 11.6 S29GL-P Erase and Program Operations
(Note 2)
min
min
S h e e t
(Note 2)
(Note 1)
S29GL-P MirrorBit
Figure 11.8 Power-up Sequence Timings
(Note 2)
( P r e l i m i n a r y )
t
VCS
t
VIOS
IO
®
= 1.8 V and V
Flash Family
Per Word
Per Word
Word
Word
CC
= 3.0 V.
Max
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Typ
Typ
t
RH
90
90
100
100
Speed Options
13.5
480
250
110
110
0.5
15
45
30
20
20
35
30
15
60
54
35
90
50
0
0
0
0
0
0
120
120
130
130
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
ns
µs
ns
µs
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