ZXM64P03XTA Diodes Inc, ZXM64P03XTA Datasheet - Page 2
![MOSFET Small Signal 30V P Chnl HDMOS](/photos/16/8/160814/msop-8_sml.jpg)
ZXM64P03XTA
Manufacturer Part Number
ZXM64P03XTA
Description
MOSFET Small Signal 30V P Chnl HDMOS
Manufacturer
Diodes Inc
Datasheet
1.ZXM64P03XTA.pdf
(7 pages)
Specifications of ZXM64P03XTA
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.075 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.8 A
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
MSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXM64P03XTA
Manufacturer:
ZETEX
Quantity:
20 000
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ISSUE 1 - OCTOBER 2005
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)(b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
A
A
=25°C (a)
=25°C (b)
(V
(V
GS
GS
=4.5V; T
=4.5V; T
A
A
=25°C)(b)
=70°C)(b)
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
D
DM
S
SM
2
D
D
j
DSS
GS
θJA
θJA
:T
stg
-55 to +150
VALUE
LIMIT
14.4
-3.8
-3.0
-2.3
113
-30
-19
-19
1.1
8.8
1.8
70
20
ZXM64P03X
S E M I C O N D U C T O R S
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
°C
W
W
A
A
A
A
V
V