2N7002 Central Semiconductor, 2N7002 Datasheet

MOSFET Small Signal N-Ch 60V .2A

2N7002

Manufacturer Part Number
2N7002
Description
MOSFET Small Signal N-Ch 60V .2A
Manufacturer
Central Semiconductor
Datasheet

Specifications of 2N7002

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7.5 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
0.08 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
40 V
Continuous Drain Current
0.115 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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MAXIMUM RATINGS: (T A =25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current (T C =25°C)
Continuous Drain Current (T C =100°C)
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)
SYMBOL
I GSSF
I GSSR
I DSS
I DSS
I D(ON)
BV DSS
V GS(th)
V DS(ON)
V DS(ON)
V SD
r DS(ON)
r DS(ON)
r DS(ON)
r DS(ON)
g FS
ENHANCEMENT-MODE
SURFACE MOUNT
SILICON MOSFET
TEST CONDITIONS
V GS =20V
V GS =20V
V DS =60V, V GS =0
V DS =60V, V GS =0, T A =125°C
V DS =10V, V GS =10V
I D =10μA
V DS =V GS , I D =250μA
V GS =10V, I D =500mA
V GS =5.0V, I D =50mA
V GS =0, I S =11.5mA
V GS =10V, I D =500mA
V GS =10V, I D =500mA, T A =100°C
V GS =5.0V, I D =50mA
V GS =5.0V, I D =50mA, T A =100°C
V DS =10V, I D =200mA
SOT-23 CASE
N-CHANNEL
2N7002
SYMBOL
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N7002 type is a
N-Channel Field Effect Transistor, manufactured by the
N-Channel DMOS Process, designed for high speed
pulsed amplifier and driver applications.
MARKING CODE: 702
T J , T stg
V DG
V GS
V DS
I DM
Θ JA
MIN
I SM
500
P D
1.0
60
80
I D
I D
I S
TYP
105
2.1
3.7
6.2
-65 to +150
115
115
800
800
350
357
60
60
40
75
0.375
MAX
3.75
13.5
13.5
100
100
500
1.0
2.5
1.5
7.5
7.5
w w w. c e n t r a l s e m i . c o m
R5 (31-January 2011)
UNITS
UNITS
°C/W
mW
mA
mA
mA
mA
mA
mA
mS
nA
nA
μA
μA
°C
Ω
Ω
Ω
Ω
V
V
V
V
V
V
V
V

Related parts for 2N7002

2N7002 Summary of contents

Page 1

... V GS =10V =500mA =100°C r DS(ON =5.0V =50mA r DS(ON =5.0V =50mA =100° =10V =200mA DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. MARKING CODE: 702 SYMBOL ...

Page 2

... SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET ELECTRICAL CHARACTERISTICS - Continued =25°C unless otherwise noted) SYMBOL TEST CONDITIONS C rss V DS =25V =0, f=1.0MHz C iss V DS =25V =0, f=1.0MHz C oss V DS =25V =0, f=1.0MHz =30V =200mA =25Ω =150Ω t off V DD =30V =200mA =25Ω =150Ω ...

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