ZVN4106FTA Diodes Inc, ZVN4106FTA Datasheet
ZVN4106FTA
Manufacturer Part Number
ZVN4106FTA
Description
MOSFET Small Signal N-Chnl 60V
Manufacturer
Diodes Inc
Datasheet
1.ZVN4106FTC.pdf
(2 pages)
Specifications of ZVN4106FTA
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.5 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.2 A
Power Dissipation
330 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZVN4106FTA
Manufacturer:
ZETEX
Quantity:
18 350
Part Number:
ZVN4106FTA
Manufacturer:
ZETEX
Quantity:
20 000
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – DECEMBER 1995
PARMARKING DETAIL - MZ
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50
Spice parameter data is available upon request for this device
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate-Source Voltage
Max Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance(1)(2
)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
amb
amb
=25°C
BV
C
T
SYMBOL MIN.
V
I
I
I
R
g
C
C
T
T
T
GSS
DSS
D(on)
fs
d(on)
r
d(off)
f
=25°C
GS(th)
DS(on)
iss
oss
rss
DSS
source impedance and <5ns rise time on a pulse generator
60
1.3
1
150
3 - 399
amb
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
MAX. UNIT CONDITIONS.
3
100
10
50
2.5
5
35
25
8
5
7
6
8
stg
V
V
nA
A
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
I
V
V
V
V
V
V
V
V
V
D
D
GS
DS
DS
DS
GS
GS
DS
DS
DD
=1mA, V
=1mA, V
-55 to +150
= 20V, V
=60V, V
=48V, V
=25V, V
=10V, I
=5V, I
=25V, I
=25V, V
VALUE
25V, I
330
0.2
60
3
ZVN4106F
20
D
D
GS
=200mA
DS
D
D
D
GS
GS
GS
GS
=250mA
=500mA
=150mA
=0V
= V
DS
=0
=0V, T=125°C
=10V
=0V, f=1MHz
=0V
GS
UNIT
mW
°C
V
A
A
V
G
S
(2)
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ZVN4106FTA Summary of contents
Page 1
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – DECEMBER 1995 PARMARKING DETAIL - MZ ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T Pulsed Drain Current Gate-Source Voltage Max Power Dissipation at T Operating and Storage ...
Page 2
ZVN4106F Drain Source Voltage (V) DS Saturation Characteristics 1.8 I =0.5A D 1.2 0 Junction Temperature ( °C) j Normalised R & V DS(on) ...