ZXMN6A08E6TA Diodes Inc, ZXMN6A08E6TA Datasheet - Page 5

• Manufacturer Part Number: ZXMN6A08E6TA
• Description: MOSFET Small Signal 60V N-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN6A08E6TA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
ZXMN6A08E6
Document Number DS33376 Rev. 5 - 2
0.01
0.1
0.1
0.1
10
10
Typical Transfer Characteristics
1
1
1
0.1
On-Resistance v Drain Current
V
T = 25°C
T = 25°C
0.1
DS
3V
V
2
= 10V
V
DS
GS
Output Characteristics
T = 150°C
Drain-Source Voltage (V)
Gate-Source Voltage (V)
I
D
Drain Current (A)
10V
3
1
3.5V
1
T = 25°C
5V
4
4V
4.5V
10
10
5V
7V
5
V
3V
V
3.5V
10V
4.5V
4V
GS
GS
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0.01
0.01
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
0.1
Source-Drain Diode Forward Voltage
10
10
Normalised Curves v Temperature
1
1
-50
0.2
T = 150°C
0.1
V
V
Tj Junction Temperature (°C)
T = 150°C
0.4
DS
SD
Output Characteristics
Drain-Source Voltage (V)
0
Source-Drain Voltage (V)
Diodes Incorporated
0.6
A Product Line of
1
50
T = 25°C
0.8
V
I
D
GS
= 4.8A
V
I
= 10V
D
GS
= 250uA
10V
= V
1.0
V
100
GS
DS
= 0V
10
R
V
DS(on)
ZXMN6A08E6
5V
GS(th)
1.2
2.5V
V
3V
4V
3.5V
2V
GS
150
© Diodes Incorporated
August 2010