... TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) High Speed Switching Applications • Optimum for high-density mounting in small packages • Low on-resistance 145mΩ (max) (@ 180mΩ (max) (@V on Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage DC Drain current ...
Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time Note2: Pulse test Switching ...
ID 10 25°C -25°C Ta=100°C 1 Common Source VDS=3V Ta=25° 100 1000 Drain current ID (mA VDS 1000 Common Source VGS=0V f=1MHz Ta=25°C 100 10 0 Drain-Source voltage VDS ( ...
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