SSM6K24FE(TE85L,F) Toshiba, SSM6K24FE(TE85L,F) Datasheet

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... TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) High Speed Switching Applications • Optimum for high-density mounting in small packages • Low on-resistance 145mΩ (max) (@ 180mΩ (max) (@V on Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage DC Drain current ...

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Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time Note2: Pulse test Switching ...

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ID - VDS 1600 1.8 1400 2.0 1200 3.0 4.0 1000 5.0 VGS=1.4V 800 600 400 Common Source 200 Ta=25° 0.2 0.4 0.6 0.8 Drain-Source voltage VDS (V) RDS(ON 200 Common Source 180 Ta=25°C 160 2.5V ...

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ID 10 25°C -25°C Ta=100°C 1 Common Source VDS=3V Ta=25° 100 1000 Drain current ID (mA VDS 1000 Common Source VGS=0V f=1MHz Ta=25°C 100 10 0 Drain-Source voltage VDS ( ...

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... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...