DMN4027SSS-13 Diodes Inc, DMN4027SSS-13 Datasheet - Page 6

• Manufacturer Part Number: DMN4027SSS-13
• Description: MOSFET Small Signal MOSFET,N-CHANNEL 40V, 6.1A/- 8A
• Manufacturer: Diodes Inc

Specifications of DMN4027SSS-13

• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.031 Ohms
• Gate Charge Qg: 6.3 nC
• Forward Transconductance Gfs (max / Min): 22.8 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 1.56 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics - continued
Test Circuits
DMN4027SSS
Document Number DS32103 Rev 1 - 2
90%
10%
V
V
GS
DS
V
G
800
600
400
200
Capacitance v Drain-Source Voltage
0
0.1
Q
GS
t
Basic gate charge waveform
d(on)
Switching time waveforms
V
t
(on)
DS
t
r
- Drain - Source Voltage (V)
C
Q
Q
ISS
G
GD
1
Charge
C
OSS
t
d(off)
C
RSS
t
(on)
10
t
V
f = 1MHz
r
GS
= 0V
www.diodes.com
6 of 8
Gate-Source Voltage v Gate Charge
10
8
6
4
2
0
0
Switching time test circuit
Gate charge test circuit
2
12V
R
Diodes Incorporated
G
Q - Charge (nC)
4
A Product Line of
V
regulator
6
Current
GS
50k
I
G
V
GS
8
R
Same as
D.U.T
D
10
D.U.T
V
I
DMN4027SSS
D
DS
= 7A
V
= 20V
DS
12
© Diodes Incorporated
I
V
D
DS
14
March 2010
V
DD