ZXMN3A01FTA Diodes Inc, ZXMN3A01FTA Datasheet - Page 6

• Manufacturer Part Number: ZXMN3A01FTA
• Description: MOSFET Small Signal 30V N-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN3A01FTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.12 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 806 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Drain Current Id: 2A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 120mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ZXMN3A01F
300
250
200
150
100
50
Basic Gate Charge Waveform
0
0.1
Switching Time Waveforms
Capacitance v Drain-Source Voltage
V
DS
- Drain - Source Voltage (V)
1
C
ISS
TYPICAL CHARACTERISTICS
C
OSS
C
V
f = 1MHz
RSS
GS
10
= 0V
6
10
8
6
4
2
0
0
Gate-Source Voltage v Gate Charge
Switching Time Test Circuit
I
D
Gate Charge Test Circuit
= 2.5A
1
Q - Charge (nC)
2
V
DS
= 15V
ISSUE 2 - JULY 2002
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4