ZXMN3F30FHTA Diodes Inc, ZXMN3F30FHTA Datasheet

MOSFET Small Signal 30V N-Channel Enhance. Mode MOSFET

ZXMN3F30FHTA

Manufacturer Part Number
ZXMN3F30FHTA
Description
MOSFET Small Signal 30V N-Channel Enhance. Mode MOSFET
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXMN3F30FHTA

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.047 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.6 A
Power Dissipation
1400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN3F30FHTA
Manufacturer:
Diodes
Quantity:
24 600
Part Number:
ZXMN3F30FHTA
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
Part Number:
ZXMN3F30FHTA/KNA
Manufacturer:
ZETEX
Quantity:
20 000
ZXMN3F30FH
30V SOT23 N-channel enhancement mode MOSFET
Summary
Description
This new generation Trench MOSFET from Zetex features low on-
resistance achievable with 4.5V gate drive.
Features
Applications
Ordering information
Device marking
KNA
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
DEVICE
ZXMN3F30FHTA
V
Low on-resistance
4.5V gate drive capability
SOT23
DC-DC Converters
Power management functions
Motor Control
(BR)DSS
30
0.065 @ V
0.047 @ V
R
DS(on)
GS
GS
Reel size
(inches)
(Ω)
= 4.5V
= 10V
7
Tape width
I
D
4.6
4.0
(mm)
(A)
8
1
Quantity
per reel
3000
D
G
Top view
www.zetex.com
S
D
G
S

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ZXMN3F30FHTA Summary of contents

Page 1

... SOT23 Applications • DC-DC Converters • Power management functions • Motor Control Ordering information DEVICE Reel size (inches) ZXMN3F30FHTA Device marking KNA Issue 2 - February 2008 © Zetex Semiconductors plc 2008 I (A) D 4.6 4.0 Tape width Quantity (mm) per reel ...

Page 2

Absolute maximum ratings Parameter Drain source voltage Gate source voltage Continous Drain Current @ (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C A Linear ...

Page 3

Thermal characteristics Issue 2 - February 2008 © Zetex Semiconductors plc 2008 ZXMN3F30FH 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Static Drain-Source breakdown Voltage Zero gate voltage drain current Gate-body leakage Gate-Source threshold voltage Static Drain-Source (*) on-state resistance Forward (*)(†) transconductance (†) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) Switching Turn-on-delay ...

Page 5

Typical characteristics Issue 2 - February 2008 © Zetex Semiconductors plc 2008 ZXMN3F30FH 5 www.zetex.com ...

Page 6

Typical characteristics Test circuits Issue 2 - February 2008 © Zetex Semiconductors plc 2008 ZXMN3F30FH 6 www.zetex.com ...

Page 7

Package outline - SOT23 leads Dim. Millimeters Min. Max 1.12 A1 0.01 0.10 b 0.30 0.50 c 0.085 0.20 D 2.80 3.04 e 0.95 NOM Note: Controlling dimensions are in millimeters. ...

Page 8

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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