3N163-E3 Vishay, 3N163-E3 Datasheet
3N163-E3
Specifications of 3N163-E3
Related parts for 3N163-E3
3N163-E3 Summary of contents
Page 1
... Ultra-Low Input Leakage: 0.02 pA Typ. High Gate Breakdown Voltage: 125 V Normally Off Description The 3N163/164 are lateral p-channel MOSFETs designed for analog switch and preamplifier applications where high speed and low parasitic capacitances are required. Absolute Maximum Ratings (T Continuous Drain Current ...
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... V = – – oss MHz rss – 1500 = 1500 –10 mA – GEN 3N163 3N164 –70 –40 –30 –70 –40 – –2.5 –2 –5 –2 –5 –3.5 –3 –6.5 –2.5 –6.5 <–1 –10 –1 <–1 –10 pA –1 –8 –200 –400 –20 nA –10 –400 – ...
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... V = – kHz – –4 V 100 = –0.4 –0.01 Low-Level Drain-Source On-Voltage 2.5 = 100 2.0 1.5 1.0 0.5 0 –20 0 3N163/3N164 Transfer Characteristics GS –8 –12 –16 –20 V – Gate-Source Voltage (V) GS vs. Drain Current 125 C –0.1 –1 –10 I – Drain Current (mA) D vs. Gate-Source Voltage –10 – ...
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... Typical Characteristics (Cont’d) Capacitance vs. Gate-Source Voltage 3.0 C iss 2 oss DS 1 MHz 1.2 0 –4 –8 –12 V – Gate-Source Voltage (V) GS Common-Source Output Conductance vs. Drain Voltage kHz –10 mA D(on) 100 – –5 –10 –15 –20 V – Drain-Source Voltage (V) DS Switching Time Test Circuit To Scope – ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...