ZVN3306FTA Diodes Inc, ZVN3306FTA Datasheet
ZVN3306FTA
Manufacturer Part Number
ZVN3306FTA
Description
MOSFET Small Signal N-Chnl 60V
Manufacturer
Diodes Inc
Datasheet
1.ZVN3306FTA.pdf
(3 pages)
Specifications of ZVN3306FTA
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.15 A
Power Dissipation
330 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Drain Current Id
150mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZVN3306FTA
Manufacturer:
ZETEX
Quantity:
3 000
Part Number:
ZVN3306FTA
Manufacturer:
ZETEX
Quantity:
20 000
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996
FEATURES
*
*
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50
Spice parameter data is available upon request for this device
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
R
60 Volt V
DS(on)
= 5
DS
amb
=25°C
ZVP3306F
MC
amb
t
t
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
=25°C
GS(th)
DS(on)
iss
oss
rss
DSS
source impedance and <5ns rise time on a pulse generator
60
0.8
750
150
3 typ
4 typ
4 typ
5 typ
3 - 393
amb
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
MAX. UNIT CONDITIONS.
2.4
20
0.5
50
5
35
25
8
5
7
6
8
stg
V
V
nA
mA
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
I
V
V
V
V
V
V
V
V
D
D
GS
DS
DS
DS
GS
DS
DS
DD
=1mA, V
=1mA, V
-55 to +150
=60V, V
=48V, V
=18V, V
=18V, I
=18V, V
= 20V, V
=10V, I
VALUE
18V, I
150
330
60
ZVN3306F
3
20
D
GS
DS
D
D
GS
GS
GS
GS
D
=500mA
=500mA
=0V
= V
=500mA
DS
=0V
=0V, T=125°C
=10V
=0V, f=1MHz
SOT23
=0V
GS
UNIT
mW
mA
°C
V
A
V
G
S
(2)
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ZVN3306FTA Summary of contents
Page 1
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – JANUARY 1996 FEATURES * DS(on Volt V DS COMPLEMENTARY TYPE - PARTMARKING DETAIL - ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T ...
Page 2
ZVN3306F TYPICAL CHARACTERISTICS V 10V 9V GS= 1.0 0.8 0.6 0.4 0 Drain Source Voltage (Volts) DS Saturation Characteristics 1.0 V 10V DS= 0.8 0.6 0.4 0 ...
Page 3
TYPICAL CHARACTERISTICS 200 180 160 140 120 V 18V DS= 100 -Gate Source Voltage (Volts) GS Transconductance v gate-source voltage V =20V 30V 50V ...